Temperature dependence of current–voltage characteristics of MoS 2 /Si devices prepared by the chemical vapor deposition method

Published 2017 View Full Article

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Title
Temperature dependence of current–voltage characteristics of MoS 2 /Si devices prepared by the chemical vapor deposition method
Authors
Keywords
-
Journal
MICROELECTRONICS RELIABILITY
Volume 78, Issue -, Pages 374-378
Publisher
Elsevier BV
Online
2017-10-13
DOI
10.1016/j.microrel.2017.10.002

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