Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

Published 2017 View Full Article

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Title
Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET
Authors
Keywords
Uniaxial strained Si, Nanometer NMOSFET, Total dose, Hot carrier gate current
Journal
MICROELECTRONICS RELIABILITY
Volume 75, Issue -, Pages 69-76
Publisher
Elsevier BV
Online
2017-06-21
DOI
10.1016/j.microrel.2017.06.018

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