On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics

Microstructural, electrical and frequency-dependent properties of Au/p-Cu 2 ZnSnS 4 /n-GaN heterojunction

(2017) V. Rajagopal Reddy et al.   JOURNAL OF COLLOID AND INTERFACE SCIENCE

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

(2016) Çiğdem Ş. Güçlü et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

(2016) O. Çiçek et al.   COMPOSITES PART B-ENGINEERING

Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method

(2016) Gulcin Ersoz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/SY/p-Si Organic–Inorganic Heterojunction

(2016) Arife Gencer Imer et al.   JOURNAL OF ELECTRONIC MATERIALS

Frequency and voltage dependence of admittance characteristics of Al/Al 2 O 3 /PVA:n-ZnSe Schottky barrier diodes

(2016) Mamta Sharma et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co 3 O 4 -PVA/p-Si structures

(2016) Çiğdem Bilkan et al.   PHYSICA B-CONDENSED MATTER

Temperature-dependent current–voltage measurements of Au/C9H7N/p-Si: Characterization of a metal–organic-semiconductor device

(2015) Z. Çaldıran et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure

(2015) E. Marıl et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

(2015) I. Jyothi et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

(2015) Zagarzusem Khurelbaatar et al.   MATERIALS TRANSACTIONS

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

(2014) V. Rajagopal Reddy et al.   JOURNAL OF ELECTRONIC MATERIALS

Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

(2012) S. Demirezen et al.   CURRENT APPLIED PHYSICS

Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

(2011) Tuncay Tunç et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes

(2010) Tuncay Tunç et al.   International Journal of Polymeric Materials and Polymeric Biomaterials

The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements

(2009) Adem Tataroğlu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

(2009) İ. Dökme et al.   MICROELECTRONICS RELIABILITY