Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Published 2011 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
Authors
Keywords
-
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 14, Issue 2, Pages 139-145
Publisher
Elsevier BV
Online
2011-02-24
DOI
10.1016/j.mssp.2011.01.018

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.