n- and p-type dopants in the InSe monolayer via substitutional doping
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Title
n- and p-type dopants in the InSe monolayer via substitutional doping
Authors
Keywords
Group Versus, Formation Energy, Transition Level, Impurity State, Valence Band Maximum
Journal
JOURNAL OF MATERIALS SCIENCE
Volume 52, Issue 12, Pages 7207-7214
Publisher
Springer Nature
Online
2017-03-07
DOI
10.1007/s10853-017-0957-1
References
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