- Home
- Publications
- Publication Search
- Publication Details
Title
Highly-mismatched InAs/InSe heterojunction diodes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 18, Pages 182115
Publisher
AIP Publishing
Online
2016-11-05
DOI
10.1063/1.4967381
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
- (2016) A. Politano et al. Nanoscale
- Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry
- (2016) Sidong Lei et al. Nature Nanotechnology
- High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
- (2015) Garry W. Mudd et al. ADVANCED MATERIALS
- Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
- (2015) Saptarshi Das et al. Annual Review of Materials Research
- H-tailored surface conductivity in narrow band gap In(AsN)
- (2015) A. V. Velichko et al. APPLIED PHYSICS LETTERS
- Solid-State Reaction Synthesis of a InSe/CuInSe2 Lateral p–n Heterojunction and Application in High Performance Optoelectronic Devices
- (2015) Wei Feng et al. CHEMISTRY OF MATERIALS
- Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
- (2015) Andrea C. Ferrari et al. Nanoscale
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- Fabrication and characterization of photosensitive n-ZnO/p-InSe heterojunctions
- (2015) Z. Kudrynskyi et al. THIN SOLID FILMS
- Impact of charge transport on current–voltage characteristics and power-conversion efficiency of organic solar cells
- (2015) Uli Würfel et al. Nature Communications
- Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface
- (2014) Wei Feng et al. ADVANCED MATERIALS
- Band Engineering for Novel Two-Dimensional Atomic Layers
- (2014) Qingsheng Zeng et al. Small
- Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions
- (2014) Nilanthy Balakrishnan et al. Advanced Optical Materials
- Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions
- (2013) Z.R. Kudrynskyi et al. ACTA PHYSICA POLONICA A
- Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
- (2013) Young Joon Hong et al. ADVANCED MATERIALS
- Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
- (2013) Garry W. Mudd et al. ADVANCED MATERIALS
- Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes
- (2013) Steven Chuang et al. APPLIED PHYSICS LETTERS
- Impact Ionization in InAs Electron Avalanche Photodiodes
- (2010) Andrew R. J. Marshall et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now