Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Published 2017 View Full Article

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Title
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
Authors
Keywords
Molecular beam epitaxy, GaSbBi, Semiconducting III–V materials, X-ray diffraction
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 477, Issue -, Pages 144-148
Publisher
Elsevier BV
Online
2017-03-31
DOI
10.1016/j.jcrysgro.2017.03.048

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