Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 ° C with three-pulsed precursors per growth cycle

Title
Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 ° C with three-pulsed precursors per growth cycle
Authors
Keywords
A1. Characterization, A3. Atomic layer epitaxy, B1. Oxides, B2. Semiconducting II-VI materials
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 475, Issue -, Pages 39-43
Publisher
Elsevier BV
Online
2017-06-02
DOI
10.1016/j.jcrysgro.2017.05.033

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