Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 ° C with three-pulsed precursors per growth cycle

标题
Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 ° C with three-pulsed precursors per growth cycle
作者
关键词
A1. Characterization, A3. Atomic layer epitaxy, B1. Oxides, B2. Semiconducting II-VI materials
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 475, Issue -, Pages 39-43
出版商
Elsevier BV
发表日期
2017-06-02
DOI
10.1016/j.jcrysgro.2017.05.033

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