Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

(2010) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(2010) W. Chikhaoui et al.   APPLIED PHYSICS LETTERS

The fabrication of GaN-based light emitting diodes (LEDs)

(2010) Xu Lin Nguyen et al.   Advances in Natural Sciences-Nanoscience and Nanotechnology

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

(2009) Engin Arslan et al.   APPLIED PHYSICS LETTERS

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

(2009) Engin Arslan et al.   JOURNAL OF APPLIED PHYSICS

High quality GaN-based Schottky barrier diodes

(2008) K. H. Lee et al.   APPLIED PHYSICS LETTERS