Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

Published 2017 View Full Article

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Title
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
Authors
Keywords
High-k gate dielectric, Atomic-layer-deposition, Interface stability, Phase separation, Annealing temperature
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 716, Issue -, Pages 1-6
Publisher
Elsevier BV
Online
2017-05-06
DOI
10.1016/j.jallcom.2017.05.018

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