3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109endurance and good retention

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 56, Issue 4S, Pages 04CE04

出版商

Japan Society of Applied Physics

发表日期

2017-02-27

DOI

10.7567/jjap.56.04ce04

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