Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

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Title
Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 64, Issue 1, Pages 285-292
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-12-08
DOI
10.1109/tns.2016.2634538

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