Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

出版年份 2017 全文链接

标题

作者

关键词

出版物

Volume 64, Issue 1, Pages 285-292

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2016-12-08

DOI

10.1109/tns.2016.2634538

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started