Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

Published 2017 View Full Article

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Title
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 3, Pages 1020-1025
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-01-25
DOI
10.1109/ted.2017.2650920

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