Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

出版年份 2017 全文链接

标题

作者

关键词

出版物

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 64, Issue 3, Pages 1020-1025

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2017-01-25

DOI

10.1109/ted.2017.2650920

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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