Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region

Published 2017 View Full Article

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Title
Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 12, Pages 4838-4843
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-11-01
DOI
10.1109/ted.2017.2762926

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