Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

标题
Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 8, Pages 3151-3158
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-06-08
DOI
10.1109/ted.2017.2709338

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