Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 23, Issue 5, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2017.2654058
Keywords
Boron; conductivity; doping; germanium nanocrystals; oxidation
Categories
Funding
- National Basic Research Program of China [2013CB632101]
- Natural Science Foundation of China (NSFC) Program for Excellent Young Researchers [61222404]
- NSFC General Program [61474097]
Ask authors/readers for more resources
Doping enables the effective tuning of the properties of semiconductor nanocrystals (NCs). In this paper, germanium (Ge) NCs are doped with boron (B) in nonthermal plasma. It is shown that B atoms prefer residing at/near the NC surface, rather than in the NC core. The surface state of Ge NCs is modified by the B doping. The oxidation of B-doped Ge NCs is not as serious as that of undoped Ge NCs. Devices based on B-doped Ge-NC films cast from the dispersion of B-doped Ge NCs have been fabricated. It is shown that the electrical conduction of the B-doped Ge-NC films is closely related to the doping level of B.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available