期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 23, 期 5, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2017.2654058
关键词
Boron; conductivity; doping; germanium nanocrystals; oxidation
资金
- National Basic Research Program of China [2013CB632101]
- Natural Science Foundation of China (NSFC) Program for Excellent Young Researchers [61222404]
- NSFC General Program [61474097]
Doping enables the effective tuning of the properties of semiconductor nanocrystals (NCs). In this paper, germanium (Ge) NCs are doped with boron (B) in nonthermal plasma. It is shown that B atoms prefer residing at/near the NC surface, rather than in the NC core. The surface state of Ge NCs is modified by the B doping. The oxidation of B-doped Ge NCs is not as serious as that of undoped Ge NCs. Devices based on B-doped Ge-NC films cast from the dispersion of B-doped Ge NCs have been fabricated. It is shown that the electrical conduction of the B-doped Ge-NC films is closely related to the doping level of B.
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