Article
Engineering, Electrical & Electronic
Yuan Qin, Ming Xiao, Ruizhe Zhang, Qingyun Xie, Tomas Palacios, Boyan Wang, Yunwei Ma, Ivan Kravchenko, Dayrl P. Briggs, Dale K. Hensley, Bernadeta R. Srijanto, Yuhao Zhang
Summary: This work presents the fabrication of quasi-vertical GaN Schottky barrier diodes (SBDs) on a 6-inch Si substrate with a record-breaking breakdown voltage (BV) of over 1 kV. The novel use of a deep mesa in quasi-vertical devices allows for a self-aligned edge termination, and the mesa sidewall is covered by p-type nickel oxide (NiO) to reduce the surface field. The device exhibits a parallel-plane junction electric field of 2.8 MV/cm, along with low turn-on voltage and specific on-resistance. Additionally, it demonstrates excellent overvoltage robustness under continuous stress.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Yu Duan, Jingshan Wang, Zhongtao Zhu, Guanxi Piao, Kazutada Ikenaga, Hiroki Tokunaga, Shuuichi Koseki, Mayank Bulsara, Patrick Fay
Summary: We present a ion-implanted triple-zone junction termination extension (JTE) for vertical GaN p-n diodes. The design of triple-zone JTE reduces the peak electric fields at the contact metal edge and at the edge of the JTE compared to conventional approaches. Experimental results show that GaN p-n diodes with triple-zone JTE achieve a maximum breakdown voltage of 1.27 kV, significantly higher than those with single-zone JTE structure. The triple-zone JTE design provides a wider window for fabrication processing and epitaxial wafer growth, making it promising for cost-effective fabrication of GaN power electronics.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Jun Tsunoda, Naoya Niikura, Kosuke Ota, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada
Summary: This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas diamond trench MOSFETs with a p(-)-drift layer. The fabricated transistor shows high drain current density, field-effect mobility, and low specific on-resistance, as well as a high breakdown voltage, indicating its potential as a p-channel power device.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Chen Yang, Houqiang Fu, Kai Fu, Tsung-Han Yang, Jingan Zhou, Jossue Montes, Yuji Zhao
Summary: This paper investigates low-leakage hydrogen plasma (HP) terminated GaN-on-GaN vertical p-n diodes, achieving significant reductions in leakage current and improvements in breakdown voltage with a p-GaN extension design. The devices demonstrate non-destructive breakdown voltage of 1.68 kV, specific on-resistance of 0.40 MΩcm², and Baliga's figure of merit of 7.1 GWcm(-2), showing the effectiveness of HP termination with p-GaN extension in enhancing the performance of vertical GaN power diodes.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Akira Mase, Pradip Dalapati, Ryosuke Hayafuji, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Summary: In this study, the effect of inserting a 1 nm thick AlN thin-film layer in the drift layer of a GaN-on-Si Schottky barrier diode was investigated to improve the reverse-bias breakdown voltage. The results showed that the breakdown voltage was significantly improved from 258 V (without an AlN layer) to 338 V (with an AlN layer placed at the bottom of the drift layer), indicating the important role of the AlN thin layer in the breakdown voltage characteristics. Furthermore, x-ray diffraction measurements and stress evaluations revealed that the AlN thin-film layer inserted at the bottom of the drift layer can significantly reduce film stress and improve the breakdown voltage of the device.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Xuan Liu, Maojun Wang, Jin Wei, Cheng P. Wen, Bing Xie, Yilong Hao, Xuelin Yang, Bo Shen
Summary: Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination extension (JTE) structure with gradient hole density (GHD) is spontaneously formed for vertical gallium nitride (GaN) p-n diode based on selective area partial passivation of Mg acceptors with hydrogen. The reverse bias for the quasi-vertical GaN-on-Si p-n diodes to reach a leakage current of 1 A/cm(2) was boosted from 631 to 1100 V. Additionally, the fabricated diode exhibited superior rectifying behavior with an ON/OFF-current ratio of 10(12) and a specific differential ON-resistance of 0.75 m omega middot cm(2).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Xiaolu Guo, Yaozong Zhong, Yu Zhou, Xin Chen, Shumeng Yan, Jianxun Liu, Xiujian Sun, Qian Sun, Hui Yang
Summary: This work presents a 1200-V quasi-vertical GaN-on-Si p-n diode with a 6.6-μm thick high-quality GaN drift layer, which exhibits excellent static and dynamic performance. The diode shows stable operation at high temperatures and can effectively recover after power cycling tests. The experimental results indicate a reduced dependence of the dynamic on-resistance on the off-state voltage.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Prakash Pandey, Tolen M. Nelson, William M. Collings, Michael R. Hontz, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan Jacobs, Mona A. Ebrish, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Raghav Khanna
Summary: A simple edge termination structure for a GaN p-n diode is proposed, which has been empirically validated to increase breakdown capability. This technique reduces complexity in manufacturing and improves the device's voltage-blocking ability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Sihao Chen, Hang Chen, Yingbin Qiu, Chao Liu
Summary: In this study, GaN vertical trench MOS barrier Schottky (TMBS) diodes with embedded p-GaN shielding rings (SRs) were reported, and the impact of different structural parameters of the p-GaN SRs on the breakdown performance of the diodes was systematically investigated. The optimized p-GaN SR parameters significantly improved the breakdown voltage of the vertical TMBS diodes. By varying the doping concentration, thickness, and width of the p-GaN SRs, the electric field distribution and reverse breakdown characteristics of the TMBS diodes can be improved.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Kazuki Nomoto, Wenshen Li, Bo Song, Zongyang Hu, Mingda Zhu, Meng Qi, Vladimir Protasenko, Zexuan Zhang, Ming Pan, Xiang Gao, Hugues Marchand, Wayne Johnson, Debdeep Jena, Huili Grace Xing
Summary: This study demonstrates near-ideal forward and reverse characteristics in GaN power devices using polarization-induced (Pi) doping, highlighting the potential benefits of Pi-doped GaN power devices.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Bixuan Wang, Ruizhe Zhang, Hengyu Wang, Quanbo He, Qihao Song, Qiang Li, Florin Udrea, Yuhao Zhang
Summary: We propose a new circuit method to characterize the gate dynamic breakdown voltage (BVdyn) of Schottky-type p-gate GaN HEMTs in power converters. This method involves a resonance-like gate ringing and an inductive switching in the drain-source loop. The results show that the gate BVdyn decreases with increasing pulse width but saturates at 21-22 V. Additionally, the gate BVdyn increases with temperature and is higher under hard switching conditions.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Ming Xiao, Yifan Wang, Ruizhe Zhang, Qihao Song, Matthew Porter, Eric Carlson, Kai Cheng, Khai Ngo, Yuhao Zhang
Summary: This study presents a novel junction termination extension (JTE) technique with a graded charge profile for vertical GaN p-n diodes. The fabrication process does not require GaN etching and only involves a single-step implantation. The fabricated GaN p-n diodes exhibit high breakdown voltage and robust avalanche current density, making them suitable for various vertical GaN devices.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Computer Science, Information Systems
Jian Yin, Sihao Chen, Hang Chen, Shuti Li, Houqiang Fu, Chao Liu
Summary: This study reports on gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and analyzes the effects of key design parameters on the device characteristics. By optimizing the design parameters, the breakdown voltage of TJBS diodes can be significantly improved. Additionally, an analytical model was developed to explain the physical mechanism behind the forward conduction behavior.
Article
Engineering, Electrical & Electronic
Yitian Gu, Wei Huang, Yu Zhang, Jin Sui, Yangqian Wang, Haowen Guo, Jianjun Zhou, Baile Chen, Xinbo Zou
Summary: The temperature-dependent dc and dynamic characteristics of p-GaN gate HEMT were investigated, and it was found that the drain current improved at low temperature. The mechanisms of threshold voltage shift were analyzed, and the activation energies for hole emission and trapping processes were obtained. The detailed study of temperature-reliant dynamic performance provides useful information for low-temperature applications and device optimizations of p-GaN gate HEMT.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Review
Chemistry, Analytical
Catherine Langpoklakpam, An-Chen Liu, Yi-Kai Hsiao, Chun-Hsiung Lin, Hao-Chung Kuo
Summary: This review provides a concise overview of the significance and unique architecture of vertical GaN MOSFETs, discusses their advantages and recent advancements, and suggests methods to enhance their breakdown voltage.
