Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 6, Pages 802-805Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2700013
Keywords
Acoustoelectric effect; gallium nitride; non-reciprocal; surface acoustic wave; two-dimensional electron gas
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Funding
- ONR Young Investigator Award
- NASA JPL Spontaneous Concepts Program
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This letter reports on first-time demonstration of non-reciprocal acoustic transmission in a gallium nitride (GaN) delay line structure. The split of forward (S-21) and backward (S-12) transmissions is observed by applying a dc electric field through the active area with a two-dimensional electron gas (2DEG) sheet. The nonreciprocity (similar to 20.7 dB/mmmax. in this letter) variesby tuning the gate voltage to deplete the 2DEG sheet carrier density, which agrees with model prediction for the interaction between 2DEG and surface acoustic waves. Our preliminary results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in a GaN platform through acoustoelectric amplification.
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