DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric

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Title
DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 10, Pages 1409-1412
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-08-29
DOI
10.1109/led.2017.2746338

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