Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector

Title
Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 7, Pages 871-874
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-06-02
DOI
10.1109/led.2017.2710955

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started