Article
Engineering, Electrical & Electronic
Shu-Ming Hsu, Dung-Yue Su, Feng-Yu Tsai, Jian-Zhang Chen, I-Chun Cheng
Summary: This article demonstrates a high-gain flexible complementary metal-oxide-semiconductor inverter, showcasing desirable features for device miniaturization while maintaining stability in flexible electronics applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Ritwik Vatsyayan, Shadi A. Dayeh
Summary: We present a new physics-based model for dual-gate a-IGZO TFTs, which was fine-tuned through experimental implementation and benchtop characterization. The model accurately captures the various operating regimes and characteristics of the TFTs, including ambipolar subthreshold currents, graded interbias-regime current changes, threshold and flat-band voltages, interface trap density, gate leakage currents, noise, and small signal parameters. We validated the model's performance by designing and fabricating a two-stage common source amplifier circuit, which exhibited excellent agreement between measured and simulated gain and phase performance over a wide frequency range.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Biochemistry & Molecular Biology
Xiao Wang, Zhihua Shen, Jie Li, Shengli Wu
Summary: This study prepared a c-axis crystallized IGZO thin film by RF sputtering and found that it exhibited better acid corrosion resistance compared to amorphous IGZO films, with a 74% increase in anticorrosion performance. This suggests that crystalline IGZO thin films can provide more stable performance in applications.
Article
Engineering, Electrical & Electronic
Kaizhen Han, Subhranu Samanta, Shengqiang Xu, Ying Wu, Xiao Gong
Summary: The study found that by reducing the equivalent oxide thickness, a temperature-independent mu(eff) can be achieved in the high field or high carrier concentration regime, while a strong temperature dependency is observed in the low field or low carrier concentration regime. Additionally, the relationship between EOT scaling and the gate bias voltage at which E-F equals to E-M was studied, revealing that α-IGZO TFTs can achieve high performance in low-power applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Wei-Sheng Liu, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, Hsing-Chun Kuo
Summary: In this research, Ar/O-2 plasma treatment was utilized to modify IGZO thin films, aiming to reduce oxygen vacancy density and enhance carrier mobility. By adjusting the O-2 ratio in the plasma treatment and subsequent thermal annealing, significant improvements in TFT performance were achieved, indicating the potential of plasma-treated IGZO TFTs for next-generation flat-panel displays.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Wenjuan Zhou, Mingchen Zou, Mingxiang Wang, Dongli Zhang, Huaisheng Wang
Summary: This study investigates the effect of loading frequency on the degradation and failure behavior of flexible amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) under dynamic stretch stress. The results show a strong dependence of the TFTs on the loading frequency, which distinguishes it from previous observations on traditional materials.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2023)
Article
Engineering, Electrical & Electronic
Xiaoyu Lin, Qian Xin, Jaekyun Kim, Jidong Jin, Jiawei Zhang, Aimin Song
Summary: In this study, ultrathin AlxOy films used as gate dielectrics in thin-film transistors (TFTs) were prepared through an anodization process in aqueous and organic electrolytes. The effects of anodization electrolyte on the surface morphologies and electrical properties of AlxOy films were investigated through a series of anodization voltages. By using these anodized AlxOy films as gate dielectrics, 1-V indium-gallium-zinc-oxide (IGZO) TFTs were fabricated. The electrical characteristics of the IGZO TFTs with AlxOy films prepared in organic electrolyte showed enhancement compared to those with AlxOy films prepared in aqueous electrolyte, possibly due to the introduction of more carbon species in the anodized dielectric films. This work offers a method to further improve the properties of ultrathin anodized dielectrics and demonstrates the potential of using anodization for large-area low-power electronics in the future.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Biochemistry & Molecular Biology
Wei-Sheng Liu, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, Hsing-Chun Kuo
Summary: In this study, high-performance indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). The research found that increasing the O-2 ratio in the argon-oxygen plasma treatment mixture reduced surface roughness and improved thin-film resistivity and carrier Hall mobility. X-ray photoelectron spectroscopy measurements confirmed the decrease in carrier concentration due to the oxygen vacancy density reduction. The DG IGZO TFT devices showed enhanced characteristics after RTA, with improved field-effect mobility, subthreshold swing, and I-ON/I-OFF current ratio.
Article
Materials Science, Multidisciplinary
Yan Wang, Yingjie Tang, Yitong Chen, Dingwei Li, Huihui Ren, Guolei Liu, Fanfan Li, Ran Jin, Bowen Zhu
Summary: Flexible thin-film transistors (TFTs) and arrays using co-sputtered indium gallium zinc oxide (IGZO) and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing were achieved. The transistor switching properties were effectively improved by regulating the sputtering power of ITO. The TFTs exhibited robust mechanical flexibility, uniform performance, and high gain, making them suitable for advanced flexible displays and large-area integrated circuits.
FLEXIBLE AND PRINTED ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Kory Schlingman, Gloria M. D'Amaral, R. Stephen Carmichael, Tricia Breen Carmichael
Summary: Liquid metal-embedded elastomers (LMEEs) are deformable composites made of liquid metal particles dispersed in an elastomeric matrix. A simple process is introduced to fabricate intrinsically conductive LMEEs with conductive surfaces by sedimenting microparticles of eutectic gallium-indium alloy in the elastomer. These materials are soft, stretchable, and exhibit stable conductivity.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Materials Science, Multidisciplinary
Xianyang Xue, Tingting Zhao, Xueming Tian, Li Yuan, Zhigan Wang, Tongkuai Li, Jianhua Zhang
Summary: This article proposes a flexible dual-parameter sensor array based on a-IGZO TFTs, which decouples pressure and temperature perception by optimizing the combination of MXene and carbon nanotubes hybrid films. It has potential applications in the field of multifunctional electronic skin.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Materials Science, Multidisciplinary
Jae Yu Cho, Jaeseung Jo, Parag R. Patil, Yong Tae Kim, Deok-Yong Cho, Jin Hyeok Kim, Jaeyeong Heo
Summary: The effect of oxygen ratio and radio frequency (RF) power on the properties of CAAC-IGZO thin films was investigated. It was found that oxygen percentage plays a crucial role in film orientation, with 3.3% oxygen showing the best performance in TFT devices.
ELECTRONIC MATERIALS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Subhranu Samanta, Kaizhen Han, Chen Sun, Chengkuan Wang, Annie Kumar, Aaron Voon-Yew Thean, Xiao Gong
Summary: The study found that in the sub-10-nm regime, TFT devices with a channel thickness of 3.6 nm can achieve low subthreshold swing and the highest effective mobility. The effective mobility does not degrade significantly as the alpha-IGZO thickness is reduced from 6 to 3.6 nm.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Crystallography
Yih-Shing Lee, Sheng-Yu Zhao, Yuan-Zhe Lin, Glen Andrew Porter, Tsung-Cheng Tien
Summary: This study investigated the effects of oxygen flow rates and annealing temperatures on the properties of co-sputtered IGZO films. The results showed that increasing oxygen flow rate can improve transmittance, optical energy gap, crystallinity, and carrier mobility. The optimum process conditions were an oxygen flow rate of 3 sccm and an annealing temperature of 300 degrees Celsius.
Article
Engineering, Electrical & Electronic
Rishabh Kishore, Kavita Vishwakarma, Arnab Datta
Summary: In this study, the hole thermal generation lifetime of IGZO was extracted using a biased depleted HfO2/IGZO thin film MOS capacitor. The transition from amorphous to nano-crystalline state in IGZO thin film with increased annealing temperature resulted in differences in lifetime, which was validated through morphological analysis and XRD, SEM, and AFM measurements. The accuracy of the measured hole generation lifetime was indirectly demonstrated through surface generation velocities and energy distributions measurements.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2021)
Review
Physics, Applied
Federica Catania, Hugo de Souza Oliveira, Pasindu Lugoda, Giuseppe Cantarella, Niko Munzenrieder
Summary: The development of new materials and advanced fabrication techniques has allowed electronics to transform from bulky rigid structures to unobtrusive soft systems, leading to the realization of new thin-film devices on unconventional substrates. These innovations have enabled the creation of smart structures for tasks beyond the capabilities of traditional electronics or substrates.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Federica Catania, Mukhtar Ahmad, Dianne Corsino, Niloofar Saeedzadeh Khaanghah, Luisa Petti, Niko Munzenrieder, Giuseppe Cantarella
Summary: This study presents the fabrication and performance evaluation of flexible transparent transistors and circuits. The experimental results indicate that these transistors exhibit excellent performance and functionality, even when bent to small radii.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Lukas Voelkel, Dennis Braun, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Ke Ran, Kevin Kistermann, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Summary: The switching mechanism of multilayer hexagonal boron nitride (h-BN) threshold memristors with nickel (Ni) electrodes is investigated through temperature-dependent current-voltage measurements. The formation and retraction of nickel filaments along boron defects in the h-BN film are proposed as the resistive switching mechanism. The electrical data are corroborated with TEM analyses, confirming the viability of using temperature-dependent current-voltage measurements as a valuable tool for analyzing resistive switching phenomena in memristors made of 2D materials. The memristors exhibit wide current operation range, low standby currents, low cycle-to-cycle variability, and a large On/Off ratio.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Niloofar Saeedzadeh Khaanghah, Dianne Corsino, Federica Catania, Julio Costa, Giuseppe Cantarella, Niko Munzenrieder
Summary: The AC performance of flexible TFTs is affected by the parasitics caused by tolerances needed for the fabrication on free-standing plastic foils. The width of the semiconductor island can either be wider or narrower than the source/drain contacts. It is shown that flexible InGaZnO TFTs with wider semiconductor islands exhibit better frequency performance due to current spreading and the frequency dependency of the gate capacitance.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Sumaiya Wahid, Alwin Daus, Jimin Kwon, Shengjun Qin, Jung-Soo Ko, H. -S. Philip Wong, Eric Pop
Summary: We report the performance and gate bias stress stability of ultrathin (similar to 4 nm) channel indium tin oxide (ITO) transistors using different precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric. Water-based ALD leads to devices remaining in the on-state, while ozone-based ALD devices have less negative V-T shift at short channel lengths and relatively more positive V-T at all channel lengths. We achieve maximum drive current and good gate bias stability with normalized VT shift, improving over previous reports of uncapped ITO transistors.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Victoria Chen, Hye Ryoung Lee, Cagil Koroglu, Connor J. McClellan, Alwin Daus, Eric Pop
Summary: In this study, we characterized the electrical and thermoelectric properties of layered WSe2 with thicknesses ranging from 10 to 96 nm at temperatures between 300 and 400 K. By electrostatically gating the devices with an ion gel, we were able to investigate both electron and hole behavior over a wide range of carrier densities. The highest n- and p-type Seebeck coefficients for thin-film WSe2 at room temperature, -500 and 950 μV/K respectively, were obtained in this study. We also highlighted the significance of low substrate thermal conductivity for lateral thermoelectric measurements, which improves the platform for future studies on other nanomaterials.
Editorial Material
Nanoscience & Nanotechnology
Max C. Lemme, Alwin Daus
Summary: The growth of molybdenum disulfide at 275 degrees C and the monolithic integration of 2D transistors with silicon complementary metal oxide semiconductor circuits have been demonstrated.
NATURE NANOTECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Hugo De Souza Oliveira, Federica Catania, Albert Heinrich Lanthaler, Alejandro Carrasco-Pena, Giuseppe Cantarella, Niko Munzenrieder
Summary: Innovation in materials and technologies have allowed the fabrication of thin-film electronics on previously incompatible substrates. Transfer techniques using supportive carriers in the electronics stack have been developed to mitigate potential damages caused by conventional fabrication processes. A substrate-free approach for the transfer of ultra-thin electronics has been presented, enabling the development of ultra-thin devices on unconventional surfaces.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Hugo de Souza Oliveira, Niloofar Saeedzadeh Khaanghah, Violet Yinuo Han, Alejandro Carrasco-Pena, Alexandra Ion, Michael Haller, Giuseppe Cantarella, Niko Munzenrieder
Summary: Sensors and electronics have attracted considerable attention recently due to their ability to conform to surfaces while retaining functionality. This study presents a lightweight and permeable flexible sensor using melamine foam as a substrate, coated with metallic copper (Cu) and semiconductive Indium-Gallium-Zinc-Oxide (InGaZnO). The sensor demonstrated stable response to temperature cycling, with maximum sensitivity, permeability, and resistance variation. It also remained fully functional after being bent to a 5 mm radius.
IEEE SENSORS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Niloofar Saeedzadeh Khaanghah, Hugo de Souza Oliveira, Raheel Riaz, Federica Catania, Martina Aurora Costa Angeli, Luisa Petti, Giuseppe Cantarella, Niko Munzenrieder
Summary: The recent interest in flexible and stretchable strain sensors is due to their potential applications in various fields, such as healthcare monitoring, soft robotics, and electronic skins. Self-healability is also an important property of stretchable strain sensors, as it increases their lifespan and reduces electronic waste and cost.
IEEE SENSORS LETTERS
(2023)
Article
Optics
Qitong Li, Jung-Hwan Song, Fenghao Xu, Jorik van de Groep, Jiho Hong, Alwin Daus, Yan Joe Lee, Amalya C. Johnson, Eric Pop, Fang Liu, Mark L. Brongersma
Summary: A general pathway to reduce the detrimental impact of dephasing and non-radiative decay processes in quantum devices is illustrated through photonic design of device electrodes. The design enables large Purcell enhancement, convenient electrical gating, and high modulation efficiencies.
Article
Nanoscience & Nanotechnology
Agata Piacentini, Alwin Daus, Zhenxing Wang, Max C. C. Lemme, Daniel Neumaier
Summary: Semiconducting transition metal dichalcogenides (TMDC) are 2D materials with good charge carrier mobility, down-scalability, and low-temperature integration, making them interesting for flexible electronics. High-quality chemically grown 2D TMDCs are promising for high-performance and high-frequency devices, while TMDC thin films deposited from chemically exfoliated flakes offer a path toward low-cost production. TMDCs have the advantage of realizing p-type and n-type channels for complementary transistors, and their performance metrics are compared with other flexible channel materials.
ADVANCED ELECTRONIC MATERIALS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Alwin Daus
Summary: In this paper, the author introduces layered chalcogenide compounds and their applications in flexible electronics. The author discusses the integration of two-dimensional transition metal dichalcogenides onto flexible substrates. Furthermore, the advantages of electro-thermal engineering for flexible superlattice phase-change memory are outlined. Overall, this versatile materials integration platform shows promise for future low-power and high-performance flexible electronics.
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Sumaiya Wahid, Alwin Daus, Aravindh Kumar, H. -S. Philip Wong, Eric Pop
Summary: This study reports the achievement of dual-gated indium tin oxide (ITO) transistors with record-high drive current and excellent electrical performance. By using Ni and Pd as contact layers and annealing to recover the threshold voltage, integration of dual-gated ITO transistors with high-kappa dielectrics is realized. Pd contacts show better performance and stability.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
(2022)
Proceedings Paper
Computer Science, Theory & Methods
Leonardo A. Garcia-Garcia, George Valsamakis, Niko Munzenrieder, Daniel Roggen
Summary: This paper investigates the feasibility of using smart textile sleeves for capturing body shapes and designing orthoses, as well as introducing technological innovations and methods developed during the development process.
PERVASIVE COMPUTING TECHNOLOGIES FOR HEALTHCARE, PERVASIVE HEALTH 2021
(2022)
