Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers

Oxidation Effect in Octahedral Hafnium Disulfide Thin Film

(2016) Sang Hoon Chae et al.   ACS Nano

Raman Signatures of Polytypism in Molybdenum Disulfide

(2016) Jae-Ung Lee et al.   ACS Nano

Enhanced superconductivity in atomically thin TaS2

(2016) Efrén Navarro-Moratalla et al.   Nature Communications

Few-layer HfS2 transistors

(2016) Toru Kanazawa et al.   Scientific Reports

Large scale ZrS2 atomically thin layers

(2016) Xiaoting Wang et al.   Journal of Materials Chemistry C

Recent Advances in Two-Dimensional Materials beyond Graphene

(2015) Ganesh R. Bhimanapati et al.   ACS Nano

Ultrasensitive Phototransistors Based on Few-Layered HfS2

(2015) Kai Xu et al.   ADVANCED MATERIALS

High temperature thermoelectric properties of Zr and Hf based transition metal dichalcogenides: A first principles study

(2015) George Yumnam et al.   JOURNAL OF CHEMICAL PHYSICS

Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

(2015) Mei Zhang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

(2015) P. Tsipas et al.   MICROELECTRONIC ENGINEERING

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

(2015) Y. Cao et al.   NANO LETTERS

Two-dimensional dichalcogenides for light-harvesting applications

(2015) Bo Peng et al.   Nano Today

Controlling many-body states by the electric-field effect in a two-dimensional material

(2015) L. J. Li et al.   NATURE

Characterization of collective ground states in single-layer NbSe 2

(2015) Miguel M. Ugeda et al.   Nature Physics

Tandem intercalation strategy for single-layer nanosheets as an effective alternative to conventional exfoliation processes

(2015) Sohee Jeong et al.   Nature Communications

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

(2014) Ruoyu Yue et al.   ACS Nano

Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain

(2014) Hongyan Guo et al.   Journal of Physical Chemistry C

Two-dimensional semiconductors with possible high room temperature mobility

(2014) Wenxu Zhang et al.   Nano Research

Composition-dependent Raman modes of Mo1−xWxS2 monolayer alloys

(2013) Yanfeng Chen et al.   Nanoscale

Raman spectroscopy as a versatile tool for studying the properties of graphene

(2013) Andrea C. Ferrari et al.   Nature Nanotechnology

Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2

(2013) C. Rice et al.   PHYSICAL REVIEW B

Superconductivity in two-dimensional NbSe2field effect transistors

(2013) Mohammed S El-Bana et al.   SUPERCONDUCTOR SCIENCE & TECHNOLOGY

Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

(2013) Yan Li et al.   RSC Advances

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Probing the Nature of Defects in Graphene by Raman Spectroscopy

(2012) Axel Eckmann et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Electronic properties of graphene: a perspective from scanning tunneling microscopy and magnetotransport

(2012) Eva Y Andrei et al.   REPORTS ON PROGRESS IN PHYSICS

Ultrathin Zirconium Disulfide Nanodiscs

(2011) Jung-tak Jang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts

(2010) Liang Li et al.   ADVANCED MATERIALS