Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

Title
Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates
Authors
Keywords
MBE, 2D semiconductors, ZrSe, 2, films, ZrSe, 2, /MoSe, 2, heterostructures, Band alignment, Band structure
Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 269-272
Publisher
Elsevier BV
Online
2015-05-03
DOI
10.1016/j.mee.2015.04.113

Ask authors/readers for more resources

Reprint

Contact the author

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started