Growth far from equilibrium: Examples from III-V semiconductors

Mysterious absence of pair luminescence in gallium phosphide bismide

(2015) Theresa M. Christian et al.   Applied Physics Express

The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiyFilms

(2015) Kamran Forghani et al.   CHEMICAL VAPOR DEPOSITION

Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]

(2015) P. M. Mooney et al.   JOURNAL OF APPLIED PHYSICS

MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors

(2015) L. Nattermann et al.   JOURNAL OF CRYSTAL GROWTH

Thermodynamical and electronic properties of BxAl1−xN alloys: A first principle study

(2015) S. Kumar et al.   JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

First-principles studies on molecular beam epitaxy growth ofGaAs1−xBix

(2015) Guangfu Luo et al.   PHYSICAL REVIEW B

Diffusion of Ga adatoms at the surface of GaAs(001)c(4×4)αandβreconstructions

(2015) Marcin Mińkowski et al.   PHYSICAL REVIEW B

Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

(2015) Vaidas Pačebutas et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

MOVPE growth mechanisms of dilute bismide III/V alloys

(2015) P Ludewig et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

(2015) I P Marko et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

(2015) T Thomas et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

(2015) A. W. Wood et al.   APL Materials

GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs

(2014) Kamran Forghani et al.   APPLIED PHYSICS LETTERS

High Bi content GaSbBi alloys

(2014) M. K. Rajpalke et al.   JOURNAL OF APPLIED PHYSICS

Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy

(2014) Kamran Forghani et al.   JOURNAL OF CRYSTAL GROWTH

Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy

(2014) Z.L. Bushell et al.   JOURNAL OF CRYSTAL GROWTH

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

(2014) Mingjian Wu et al.   NANOTECHNOLOGY

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

(2013) P. M. Mooney et al.   JOURNAL OF APPLIED PHYSICS

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

(2013) S. J. Sweeney et al.   JOURNAL OF APPLIED PHYSICS

Low temperature growth of GaAs1−yBiy epitaxial layers

(2013) Kamran Forghani et al.   JOURNAL OF CRYSTAL GROWTH

Thermal annealing effects on the optical and structural properties of (100) GaAs1−xBix layers grown by Molecular Beam Epitaxy

(2013) O.M. Lemine et al.   SUPERLATTICES AND MICROSTRUCTURES

Effects of rapid thermal annealing on GaAs1-xBix alloys

(2012) A. R. Mohmad et al.   APPLIED PHYSICS LETTERS

Quaternary bismide alloy lattice matched to GaAs

(2012) Daniel A. Beaton et al.   JOURNAL OF CRYSTAL GROWTH

Study of the Fundamental Units of Novel Semiconductor Materials: Structures, Energetics, and Thermodynamics of the Ge–Sn and Si–Ge–Sn Molecular Systems

(2012) A. Ciccioli et al.   JOURNAL OF PHYSICAL CHEMISTRY A

The future of atom probe tomography

(2012) Michael K. Miller et al.   Materials Today

Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs

(2012) Heather Jacobsen et al.   PHYSICAL REVIEW B

Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy

(2012) Adam Duzik et al.   SURFACE SCIENCE

Molecular simulation predictions of miscibility characteristics and critical exponents in compound semiconductors

(2011) Sanjib Sikder et al.   JOURNAL OF CRYSTAL GROWTH

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

(2011) F. Bastiman et al.   JOURNAL OF CRYSTAL GROWTH

Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

(2011) M. Masnadi-Shirazi et al.   JOURNAL OF CRYSTAL GROWTH

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

(2011) A.J. Ptak et al.   JOURNAL OF CRYSTAL GROWTH

First principles calculations of structural, electronic, optical and thermodynamic properties of PbS, SrS and their ternary alloys Pb1−xSrxS

(2010) S. Labidi et al.   COMPUTATIONAL MATERIALS SCIENCE

A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III–V semiconductors

(2010) D. T. J. Hurle   JOURNAL OF APPLIED PHYSICS

Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

(2010) H. Fitouri et al.   MICROELECTRONIC ENGINEERING

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

(2010) Z Chine et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy

(2009) Hazem Abu-Farsakh et al.   PHYSICAL REVIEW B

Bismuth alloying in GaAs: a first-principles study

(2008) D. Madouri et al.   COMPUTATIONAL MATERIALS SCIENCE

MOVPE growth of Ga(As)SbN on GaSb substrates

(2008) J.Y.T. Huang et al.   JOURNAL OF CRYSTAL GROWTH

Growth of various antimony-containing alloys by MOVPE

(2008) Christian Grasse et al.   JOURNAL OF CRYSTAL GROWTH

Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS

(2008) Momoko Deura et al.   JOURNAL OF CRYSTAL GROWTH

Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037alloy

(2008) I Moussa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY