Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities
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Title
Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 4, Issue 47, Pages 11298-11304
Publisher
Royal Society of Chemistry (RSC)
Online
2016-11-02
DOI
10.1039/c6tc03977d
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