Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility

Designing Isoelectronic Counterparts to Layered Group V Semiconductors

(2015) Zhen Zhu et al.   ACS Nano

Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

(2015) Shengli Zhang et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility

(2015) Jun Dai et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Versatile Single-Layer Sodium Phosphidostannate(II): Strain-Tunable Electronic Structure, Excellent Mechanical Flexibility, and an Ideal Gap for Photovoltaics

(2015) Yalong Jiao et al.   Journal of Physical Chemistry Letters

Phosphorene: Fabrication, Properties, and Applications

(2015) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Atomically Thin Transition-Metal Dinitrides: High-Temperature Ferromagnetism and Half-Metallicity

(2015) Fang Wu et al.   NANO LETTERS

The Nature of the Interlayer Interaction in Bulk and Few-Layer Phosphorus

(2015) L. Shulenburger et al.   NANO LETTERS

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

(2014) Thomas Heine   ACCOUNTS OF CHEMICAL RESEARCH

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Tuning Electronic Properties of Germanane Layers by External Electric Field and Biaxial Tensile Strain: A Computational Study

(2014) Yafei Li et al.   Journal of Physical Chemistry C

Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons

(2014) Yongqing Cai et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Obtaining Two-Dimensional Electron Gas in Free Space without Resorting to Electron Doping: An Electride Based Design

(2014) Songtao Zhao et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Electronic Bandgap and Edge Reconstruction in Phosphorene Materials

(2014) Liangbo Liang et al.   NANO LETTERS

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

(2014) Ruixiang Fei et al.   NANO LETTERS

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet

(2013) Yeung Yu Hui et al.   ACS Nano

Graphene-Like Two-Dimensional Materials

(2013) Mingsheng Xu et al.   CHEMICAL REVIEWS

Synthesis, Characterization, and Properties of Few-Layer MoO3

(2013) M. B. Sreedhara et al.   Chemistry-An Asian Journal

Carrier Mobility in Graphyne Should Be Even Larger than That in Graphene: A Theoretical Prediction

(2013) Jianming Chen et al.   Journal of Physical Chemistry Letters

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications

(2012) Vasilios Georgakilas et al.   CHEMICAL REVIEWS

Visible-Light-Absorption in Graphitic C3N4 Bilayer: Enhanced by Interlayer Coupling

(2012) Fang Wu et al.   Journal of Physical Chemistry Letters

A roadmap for graphene

(2012) K. S. Novoselov et al.   NATURE

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

(2012) Ji Feng et al.   Nature Photonics

Accurate Band Gaps for Semiconductors from Density Functional Theory

(2011) Hai Xiao et al.   Journal of Physical Chemistry Letters

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

A role for graphene in silicon-based semiconductor devices

(2011) Kinam Kim et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Graphene Analogues of BN: Novel Synthesis and Properties

(2010) Angshuman Nag et al.   ACS Nano

Atomic Resolution Imaging and Topography of Boron Nitride Sheets Produced by Chemical Exfoliation

(2010) Jamie H. Warner et al.   ACS Nano

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Single-Crystal Colloidal Nanosheets of GeS and GeSe

(2010) Dimitri D. Vaughn et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Large-Scale Fabrication of Boron Nitride Nanosheets and Their Utilization in Polymeric Composites with Improved Thermal and Mechanical Properties

(2009) Chunyi Zhi et al.   ADVANCED MATERIALS

Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering

(2009) F. Guinea et al.   Nature Physics

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS