Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 4, Issue 34, Pages 7917-7923Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc01768a
Keywords
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Funding
- 973 projects [2013CBA01600, 2013CB932900]
- NSFC [61574074, 61306021]
- NSFJS [BK20130579]
- Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects [61511140098]
- [15H03568]
- [26790051]
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Ferroelectric field-effect transistors (Fe-FETs) are of great interest for a variety of non-volatile memory device applications. High-performance top-gate Fe-FET memories using ferroelectric polymers of poly( vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the inorganic oxide of InSiO were fabricated. The extracted electron mobility was as high as 84.1 cm(2) V-1 s(-1) in a low-frequency state. The interfacial charge transfer between the P(VDF-TrFE) and InSiO during annealing of the P(VDF-TrFE) layer benefits improvement in the device performance. The results show the potential of our Fe-FET memories for next-generation electronics.
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