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Title
Room temperature spin valve effect in NiFe/WS2/Co junctions
Authors
Keywords
-
Journal
Scientific Reports
Volume 6, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-02-12
DOI
10.1038/srep21038
References
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Related references
Note: Only part of the references are listed.- Spin-Valve Effect in NiFe/MoS2/NiFe Junctions
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- Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors
- (2015) Muhammad Waqas Iqbal et al. Nanoscale
- High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
- (2015) M Waqas Iqbal et al. Scientific Reports
- Interlayer dependent polarity of magnetoresistance in graphene spin valves
- (2015) M. Z. Iqbal et al. Journal of Materials Chemistry C
- Vertical Graphene Spin Valves Based on La2/3Sr1/3MnO3 Electrodes
- (2014) Feng Li et al. ACS Applied Materials & Interfaces
- Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments
- (2014) M. F. Khan et al. ACS Applied Materials & Interfaces
- Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers
- (2014) André Dankert et al. Nano Research
- Spin valve effect of NiFe/graphene/NiFe junctions
- (2013) Muhammad Zahir Iqbal et al. Nano Research
- Vertical graphene spin valve with Ohmic contacts
- (2013) Jie Meng et al. Nanoscale
- Layer-by-layer assembly of vertically conducting graphene devices
- (2013) Jing-Jing Chen et al. Nature Communications
- Identification of individual and few layers of WS2 using Raman Spectroscopy
- (2013) Ayse Berkdemir et al. Scientific Reports
- Graphene As a Tunnel Barrier: Graphene-Based Magnetic Tunnel Junctions
- (2012) Enrique Cobas et al. NANO LETTERS
- Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
- (2012) Daniele Braga et al. NANO LETTERS
- A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
- (2010) S. Ikeda et al. NATURE MATERIALS
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
- (2008) S. Ikeda et al. APPLIED PHYSICS LETTERS
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