Short-term and long-term memory operations of synapse thin-film transistors using an In–Ga–Zn–O active channel and a poly(4-vinylphenol)–sodium β-alumina electrolytic gate insulator
Short-term and long-term memory operations of synapse thin-film transistors using an In–Ga–Zn–O active channel and a poly(4-vinylphenol)–sodium β-alumina electrolytic gate insulator
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