A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV
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Title
A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV
Authors
Keywords
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Journal
Advanced Energy Materials
Volume 7, Issue 2, Pages 1600952
Publisher
Wiley
Online
2016-09-22
DOI
10.1002/aenm.201600952
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