High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time

A thyristor switch with a subnanosecond switching time

(2015) A. I. Gusev et al.   INSTRUMENTS AND EXPERIMENTAL TECHNIQUES

On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front

(2014) A. I. Gusev et al.   SEMICONDUCTORS

Effective impact ionization threshold and piecewise linear approximation for impact ionization coefficients in a theory of superfast ionizing fronts in semiconductors

(2013) Andrey Minarsky et al.   JOURNAL OF APPLIED PHYSICS

Operation of a semiconductor opening switch at ultrahigh current densities

(2012) S. K. Lyubutin et al.   SEMICONDUCTORS

Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes

(2012) P. B. Rodin et al.   TECHNICAL PHYSICS LETTERS

Pulse Power Generation in Nano- and Subnanosecond Range by Means of Ionizing Fronts in Semiconductors: The State of the Art and Future Prospects

(2010) Igor V Grekhov   IEEE TRANSACTIONS ON PLASMA SCIENCE

Dynistors with nanosecond response times

(2009) S. V. Korotkov et al.   INSTRUMENTS AND EXPERIMENTAL TECHNIQUES

Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

(2008) I.V. Grekhov et al.   IEEE TRANSACTIONS ON PLASMA SCIENCE