On the picosecond switching of a high-density current (60 kA/cm2) via a Si closing switch based on a superfast ionization front

Theory of steady-state plane tunneling-assisted impact ionization waves

(2013) A. S. Kyuregyan   SEMICONDUCTORS

Operation of a semiconductor opening switch at ultrahigh current densities

(2012) S. K. Lyubutin et al.   SEMICONDUCTORS

High-power sources of ultra-wideband radiation with subnanosecond pulse lengths

(2011) A. M. Efremov et al.   INSTRUMENTS AND EXPERIMENTAL TECHNIQUES

Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers

(2011) I. V. Grekhov et al.   TECHNICAL PHYSICS LETTERS

High-Power Ultrafast Current Switching by a Silicon Sharpener Operating at an Electric Field Close to the Threshold of the Zener Breakdown

(2010) Sergei K. Lyubutin et al.   IEEE TRANSACTIONS ON PLASMA SCIENCE

Impact ionization fronts in semiconductors: Numerical evidence of superfast propagation due to nonlocalized preionization

(2010) Pavel Rodin et al.   JOURNAL OF APPLIED PHYSICS

Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures

(2010) S. K. Lyubutin et al.   SEMICONDUCTORS