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The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions

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Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

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Tuning the threshold voltage of MoS2field-effect transistors via surface treatment

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Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

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Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Direct tunneling through high-κ amorphous HfO2: Effects of chemical modification

(2014) Yin Wang et al.   JOURNAL OF APPLIED PHYSICS

Spin-filtering, giant magnetoresistance, rectifying and negative differential resistance effects in planar four-coordinate Fe complex with graphene nanoribbon electrodes

(2014) P. Zhao et al.   JOURNAL OF CHEMICAL PHYSICS

Polarized photocurrent response in black phosphorus field-effect transistors

(2014) Tu Hong et al.   Nanoscale

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Efficient spin injection and giant magnetoresistance inFe/MoS2/Fejunctions

(2014) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Electrical contacts to monolayer black phosphorus: A first-principles investigation

(2014) Kui Gong et al.   PHYSICAL REVIEW B

Strain-Induced Gap Modification in Black Phosphorus

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Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

(2014) Yongqing Cai et al.   Scientific Reports

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study

(2012) Kamal K. Saha et al.   PHYSICAL REVIEW B

Proposal for an all-spin logic device with built-in memory

(2010) Behtash Behin-Aein et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS