Journal
PHYSICAL REVIEW B
Volume 85, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.85.184426
Keywords
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Funding
- DOE through the Center for Spintronics and Biodetection at the University of Delaware [DE-FG02-07ER46374]
- Danish National Research Foundation's Center for Nanostructured Graphene (CNG)
- NSF through XSEDE resource TACC Ranger [TG-DMR100002]
- NSF [CNS-0958512]
- Direct For Computer & Info Scie & Enginr
- Division Of Computer and Network Systems [0958512] Funding Source: National Science Foundation
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Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Gr(n)/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted pessimistic magnetoresistance of 100% for n >= 5 junctions at zero bias voltage V-b -> 0 persists up to V-b similar or equal to 0.4 V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the n = 5 junction exhibits a pronounced negative differential resistance as the bias voltage is increased from V-b = 0 V to V-b similar or equal to 0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers.
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