Evaluation of microstructural and electrical properties of WO 3-x thin films for p-Si/n-WO 3-x /Ag junction diodes

Published 2016 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Evaluation of microstructural and electrical properties of WO 3-x thin films for p-Si/n-WO 3-x /Ag junction diodes
Authors
Keywords
Tungsten oxide, Oxygen reduction, Organic acids, Dc electrical conductivity, Gaussian distribution
Journal
OPTIK
Volume 127, Issue 22, Pages 11009-11019
Publisher
Elsevier BV
Online
2016-09-06
DOI
10.1016/j.ijleo.2016.08.079

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.