Dielectric relaxation behavior and conduction mechanism of Te 46 As 32 Ge 10 Si 12 films.

Published 2016 View Full Article

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Title
Dielectric relaxation behavior and conduction mechanism of Te 46 As 32 Ge 10 Si 12 films.
Authors
Keywords
NSPT model, Debye-type relaxation process, Cole–Cole diagrams, Relaxation time
Journal
OPTIK
Volume 127, Issue 15, Pages 6232-6242
Publisher
Elsevier BV
Online
2016-04-14
DOI
10.1016/j.ijleo.2016.04.024

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