Article
Physics, Applied
J. Garcia-Fernandez, S. B. Kjeldby, P. D. Nguyen, O. B. Karlsen, L. Vines, O. Prytz
Summary: This study investigates the phase transformation and crystal structure of β-Ga2O3 samples induced by ion implantation using electron diffraction and various microscopy techniques. It reveals that the monoclinic β-phase transforms into the cubic γ-phase, contrary to previous reports. The transformation is found to be a general phenomenon due to strain accumulation and energetic preference.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Hsien-Lien Huang, Christopher Chae, Jared M. Johnson, Alexander Senckowski, Shivam Sharma, Uttam Singisetti, Man Hoi Wong, Jinwoo Hwang
Summary: The atomic scale details of the formation of point defects and their evolution to phase transformation in silicon implanted beta-Ga2O3 were investigated using high resolution scanning transmission electron microscopy (STEM). The number and size of gamma-Ga2O3 regions increased as the Si dose increased, and eventually took over the entire implanted volume when the peak Si concentration reached a certain level. Annealing disintegrated the gamma-Ga2O3 phase and returned the structure to a defect-free, single crystal beta phase. However, when the structure was completely transformed to gamma-Ga2O3, post-annealing resulted in a high concentration of dislocations within the beta phase.
Article
Physics, Applied
Arka Sardar, Tamara Isaacs-Smith, Jacob Lawson, Thaddeus Asel, Ryan B. Comes, Joseph N. Merrett, Sarit Dhar
Summary: This work demonstrates the advantage of carrying out silicon ion implantation at high temperatures in gallium oxide to form heavily doped regions with ultra-low resistance, reduced structural defects, and lattice damage.
APPLIED PHYSICS LETTERS
(2022)
Review
Materials Science, Coatings & Films
Alena Nikolskaya, Evgenia Okulich, Dmitry Korolev, Anton Stepanov, Dmitry Nikolichev, Alexey Mikhaylov, David Tetelbaum, Aleksei Almaev, Charles Airton Bolzan, Antonio Buaczik, Raquel Giulian, Pedro Luis Grande, Ashok Kumar, Mahesh Kumar, Daniela Gogova
Summary: Gallium oxide, especially its thermodynamically stable beta-Ga2O3 phase, is considered one of the most exciting materials in research and technology due to its unique properties, with potential for green electronics. Ion implantation is a traditional method that can greatly contribute to the development of Ga2O3-based materials and devices. The current focus is on experimental studies of damage under ion irradiation and properties of Ga2O3 layers doped by ion implantation.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Engineering, Electrical & Electronic
Nikita Yakovlev, Aleksei Almaev, Pavel Butenko, David Tetelbaum, Alexey Mikhaylov, Alena Nikolskaya, Aleksei Pechnikov, Sergey Stepanov, Mikhail Boiko, Andrei Chikiryaka, Vladimir Nikolaev
Summary: The effect of Si+ ion implantation on the gas-sensing properties of (0001) alpha-Ga2O3 films grown by HVPE has been investigated. The results show that irradiation with a dose of 8 x 10(12) - 8 x 10(15) cm(-2) at an energy of 100 keV followed by postimplantation annealing significantly enhances the response of alpha-Ga2O3 films to 3 vol% of H-2 at 400 degrees C, reduces the response time by a factor of 6, and extends the operating temperature range to 30 degrees C. Additionally, alpha-Ga2O3 layers irradiated with a Si+ dose of 8 x 10(13) - 8 x 10(15) cm(-2) exhibit high sensitivity to CO and NH3 gases. A mechanism for the effect of Si+ ion irradiation on the gas-sensing properties of alpha-Ga2O3 structures is proposed.
IEEE SENSORS JOURNAL
(2023)
Article
Computer Science, Information Systems
Peipei Ma, Jun Zheng, Yabao Zhang, Zhi Liu, Yuhua Zuo, Buwen Cheng
Summary: Heavy doped n-type beta-Ga2O3 (HD-Ga2O3) was obtained by Si ion implantation on unintentionally doped beta-Ga2O3 single crystal substrates. The ion-implanted layer showed high lattice quality after high-temperature annealing, and the minimum specific contact resistance was reduced by the formation of titanium oxide at the Ti/Ga2O3 interface. Lateral beta-Ga2O3 diodes prepared using HD-Ga2O3 exhibited high forward current density and low specific on-resistance.
TSINGHUA SCIENCE AND TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
A. I. Titov, K. V. Karabeshkin, A. I. Struchkov, V. I. Nikolaev, A. Azarov, D. S. Gogova, P. A. Karaseov
Summary: The mechanisms of ion-induced defect formation and physical characteristics promoting radiation tolerance of wide and ultra-wide bandgap semiconductors, particularly gallium oxide (Ga2O3), are studied in this paper. The results show that the damage formation in Ga2O3 differs from that in gallium nitride (GaN) and is strongly influenced by the polymorph type. Additionally, the study demonstrates that the metastable alpha-Ga2O3 exhibits higher radiation resistance compared to the thermodynamically stable beta-Ga2O3 polymorph. The surface of the samples and dynamic annealing are also found to play significant roles in the ion-induced damage formation processes.
Article
Engineering, Electrical & Electronic
Yongjian Ma, Xuanze Zhou, Wenbo Tang, Xiaodong Zhang, Guangwei Xu, Li Zhang, Tiwei Chen, Shige Dai, Chunxu Bian, Botong Li, Zhongming Zeng, Shibing Long
Summary: In this work, a high-performance beta-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) was demonstrated. Nitrogen ions were used to create a current blocking layer, which allowed electrons to accumulate near the U-shaped groove and form a conductive channel, promoting current generation. By modulating the concentration of implanted nitrogen ions, a UMOSFET with an applicable threshold voltage of 4.2 V was achieved. When the N ions concentration was 5 x 10^18 cm^-3, a high current density of 702.3 A/cm^2, a low on-resistance of 10.4 m Omega.cm^2, and a decent breakdown voltage of 455 V (at V_G =0 V) were obtained. The UMOSFET in this study offers great advantages in the fabrication of high-performance E-mode vertical beta-Ga2O3 MOSFETs and facilitates the development of beta-Ga2O3 power electronics devices.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Mechanical
Xin Yang, Renke Kang, Shang Gao, Zihe Wu, Xianglong Zhu
Summary: The aim of this study is to investigate the damage pattern and formation mechanism of monocrystalline beta-Ga2O3 in different grinding processes. Transmission electron microscopy was used to observe the subsurface damage in rough, fme, and ultrafine grinding processes. The results showed that there were nanocrystals and stacking faults in all three processes, while dislocations, twins, cracks, and amorphous phase were present in specific processes. The thickness of subsurface damage decreased with the reduction in the grit radius and the grit depth of cut. The study also established subsurface damage models and found that the formation of nanocrystals and amorphous phase was related to grinding conditions and material characteristics.
FRONTIERS OF MECHANICAL ENGINEERING
(2022)
Article
Materials Science, Multidisciplinary
Sudip Bhowmick, Joy Mukherjee, Vaishali Naik, Prasanta Karmakar
Summary: In this study, we report the development of a silver ion beam using electron cyclotron resonance plasma sputtering, and the synthesis of a silver nano-dot array by implanting Ag+ ions on a pre-fabricated silicon nano-template. The flux of the Ag+ ion beam is found to vary with different parameters, such as applied bias voltage, microwave power, argon gas pressure, and the position of the silver plate. The sputtering rate of silver and the final Ag beam current strongly depend on the applied bias and position of the plate.
Article
Physics, Applied
A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu. S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton
Summary: The study found that 1GeV proton irradiation induced the introduction of deep donors E2*(E-c-0.75eV) and E3 (E-c-1eV) as well as deep acceptors with optical ionization threshold near 2.3eV and related ODLTS feature near 450K. However, the total concentration of all deep traps was much lower than necessary to explain the observed decrease in net donor density upon irradiation, and the proton irradiated films showed a nonuniform distribution of donor densities with concentrations greatly decreased toward the surface.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Minwei Liu, Mingzhuo Hua, Xusheng Tian, Zhengxing Wang, Huhu Gao, Wentao Wang, Yiqiang Chen, Chunfu Zhang, Shenglei Zhao, Qian Feng, Yue Hao
Summary: This study investigated the radiation effect of gamma irradiation on Au/Ni/beta-Ga2O3 vertical Schottky barrier diodes (SBDs). It was found that the irradiated SBDs showed improvements in Schottky barrier height, ideality factor, and specific on-resistance. The results suggest that beta-Ga2O3 SBDs have high intrinsic gamma irradiation hardness.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
Xing Lu, Tongling Xu, Yuxin Deng, Chao Liao, Haoxun Luo, Yanli Pei, Zimin Chen, Yuanjie Lv, Gang Wang
Summary: In this study, performance-enhanced NiO/beta-Ga2O3 heterojunction diodes were successfully realized on an etched beta-Ga2O3 surface through applying a surface preparation process involving ICP etch and TMAH treatment. The ICP etch process created a rough surface with small peaks, resulting in a decrease of the HJDs' breakdown voltage. However, the TMAH treatment effectively removed the damages and contaminations, obviating the surface instability issue.
APPLIED SURFACE SCIENCE
(2022)
Article
Physics, Applied
Alena Nikolskaya, Alexander Revin, Dmitry Korolev, Alexey Mikhaylov, Vladimir Trushin, Alexey Kudrin, Anton Zdoroveyshchev, Daniil Zdoroveyshchev, Pavel Yunin, Mikhail Drozdov, Anton Konakov, David Tetelbaum
Summary: Ion implantation is a promising method for the development of beta-Ga2O3-based technologies and devices, but the physical principles of ion implantation for this semiconductor are still in the early stage of development. In this study, the electrical parameters of ion-doped layers were investigated, and it was found that the activation efficiency of the implanted impurity significantly exceeds unity after high-temperature annealing. It was also discovered that, in addition to shallow donors, deep defect-associated donors and acceptors exist.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
R. J. Jimenez-Rioboo, N. Gordillo, A. de Andres, A. Redondo-Cubero, M. Moratalla, M. A. Ramos, M. D. Ynsa
Summary: Diamond properties can be controlled by doping and ion-beam irradiation, which can also cause damage and other aftereffects. Boron doping is of particular interest as it can turn diamond into a p-type semiconductor at suitable concentrations and a superconductor at higher concentrations. However, the creation of superconducting boron-doped diamond is hindered by amorphization and graphitization after annealing. This study analyzed the damage and recovery of diamond irradiated with 9 MeV B ions at different fluences, using various techniques. The results showed that higher fluences led to carbon migration and increased amorphous fraction, while low fluences could fully recover the diamond structure without graphitization. However, annealing at 1200 degrees C for high fluences caused incomplete healing and the presence of graphite traces.
Article
Nanoscience & Nanotechnology
Shiva Choupanian, Alessandro Nagel, Wolfhard Moeller, Claudia Pacholski, Carsten Ronning
Summary: This study investigates the morphology changes of silver nanoparticles under ion irradiation. Hemispherical nanoparticles become conical and eventually disappear at higher ion energies, while under lower ion energies, new particles reappear with various structures.
Article
Chemistry, Physical
Shiva Choupanian, Wolfhard Moller, Martin Seyring, Carsten Ronning
Summary: This study experimentally demonstrates channeling of low-energy ions in crystalline nanoparticles, which differs from conventional high-energy ion irradiation. Channeling has a significant impact on ion transport in crystals and is relevant for focused ion beam (FIB) applications. Therefore, it is recommended not to solely rely on standard Monte-Carlo algorithms for predicting ion distribution depths in amorphous materials.
Article
Nanoscience & Nanotechnology
Hongyan Mei, Alexander Koch, Chenghao Wan, Jura Rensberg, Zhen Zhang, Jad Salman, Martin Hafermann, Maximilian Schaal, Yuzhe Xiao, Raymond Wambold, Shriram Ramanathan, Carsten Ronning, Mikhail A. Kats
Summary: In this study, we demonstrated the ability to spatially modify metal oxides using a direct writing approach with a focused ion beam system. By doping a wide-bandgap semiconductor, zinc oxide, we achieved variable carrier concentrations, and by defect engineering a correlated semiconductor, vanadium dioxide, we locally modified its insulator-to-metal transition temperature. This area-selective modification method provides a simple and mask-less route to fabricate optical structures.
Article
Materials Science, Multidisciplinary
Lukas Peters, Christoph Margenfeld, Jan Krugener, Carsten Ronning, Andreas Waag
Summary: The presence of carbon impurities in AlN was believed to be the main cause of the absorption at 265 nm. However, this study revealed that the intrinsic nitrogen-vacancy defect V-N plays a crucial role in the absorption. This finding is significant for further improvement of UV-LEDs.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Parijat Barman, Abhik Chakraborty, Denis A. Akimov, Ankit Kumar Singh, Tobias Meyer-Zedler, Xiaofei Wu, Carsten Ronning, Michael Schmitt, Juergen Popp, Jer-Shing Huang
Summary: Plasmonic gratings with spatially resolved broadband momentum were used to investigate plasmonic enhancement effects in two nonlinear optical processes, TPPL and SHG. The experimental spatial distributions of nonlinear signals agreed well with analytical predictions, highlighting the antenna function of the grating in plasmonic nonlinear signal generation.
Article
Optics
Daniel Repp, Angela Barreda, Francesco Vitale, Isabelle Staude, Ulf Peschel, Carsten Ronning, Thomas Pertsch
Summary: Semiconductor nanowire lasers can have their lasing threshold modified by their environment, and using metallic substrates can access low-volume Surface-Plasmon-Polariton (SPP) modes and describe mode competition in nanowire lasers. The study found that an aluminum substrate decreases the lasing threshold for ZnO nanowire lasers, while a silver substrate increases the threshold compared to a dielectric substrate. These findings allow for predictions about the interaction between planar metals and semiconductor nanowires, guiding future improvements in highly-integrated laser sources.
Article
Chemistry, Multidisciplinary
Christian T. Plass, Valentina Bonino, Maurizio Ritzer, Lukas R. Jager, Vicente Rey-Bakaikoa, Martin Hafermann, Jaime Segura-Ruiz, Gema Martinez-Criado, Carsten Ronning
Summary: The dynamics of color centers in quantum technology are influenced by the local environment, and a combined approach of X-ray fluorescence analysis and X-ray excited optical luminescence (XEOL) was used to study this relationship. The simultaneous acquisition of data revealed compositional and functional variations at the nanoscale, demonstrating the extraordinary capabilities of these techniques. The findings on cobalt doped zinc oxide nanowires showed an anticorrelation between the band edge emission of the zinc oxide host and the intra-3d cobalt luminescence, indicating two competing recombination paths. Time-resolved XEOL measurements also revealed two exponential decays of the cobalt luminescence, with the fast decay attributed to a recombination cascade within the cobalt atom.
Proceedings Paper
Physics, Atomic, Molecular & Chemical
K. Bharuth-Ram, T. B. Doyle, V. Adoons, C. Ronning
Summary: This study reports on the magnetic behavior of single crystal ZnO substrates implanted with different concentrations of Mn ions. Conversion electron Mossbauer spectroscopy and magnetization isotherms analysis reveal no evidence of ferromagnetic behavior, but show paramagnetic behavior dominated by nanoscale magnetic clusters.
HYPERFINE INTERACTIONS
(2022)
Article
Physics, Applied
F. Vitale, D. Repp, T. Siefke, U. Zeitner, U. Peschel, T. Pertsch, C. Ronning
Summary: In this study, a mode selection scheme based on distributed feedback was proposed to achieve quasi-single mode lasing action in plasmonic nanowires. The orientation of the nanowire on the grating was found to affect the emission spectrum, with an additional peak emerging when the nano-cavity was perpendicular to the ridge direction. This peak was attributed to a hybrid mode dominating the mode competition and supported by localized plasmon polaritons on the metal grating ridges.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
M. Popovic, M. Novakovic, D. Vana, C. Ronning, D. Jugovic, V. Rajic, P. Noga
Summary: In this study, sequential implantation of gold and silver ions with varying ion fluence, as well as subsequent annealing, were used to modify the optical and plasmonic properties of TiN thin films and correlate them with their structural properties. The implanted films showed reduced metallicity and lower losses compared to the as-deposited film, while subsequent annealing partially recovered the destroyed structure and improved the metallic properties. By optimizing the implantation fluence of silver ions, TiN films with desirable optical performances were obtained.
Article
Materials Science, Multidisciplinary
Lukas Peters, Hendrik Spende, Stefan Wolter, Christoph Margenfeld, Carsten Ronning, Tobias Voss, Andreas Waag
Summary: In this study, carbon-implanted and high-temperature annealed AlN layers were analyzed using cathodoluminescence spectroscopy. Donor-acceptor pair transitions between carbon and oxygen impurities were identified. The presence of oxygen led to absorption in the deep UV range, while carbon was responsible for an absorption band at around 265 nm. The findings were supported by temperature- and power-dependent emission energy shifts and luminescence transients.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Multidisciplinary Sciences
Nicholas A. Gusken, Ming Fu, Maximilian Zapf, Michael P. Nielsen, Paul Dichtl, Robert Roeder, Alex S. Clark, Stefan A. Maier, Carsten Ronning, Rupert F. Oulton
Summary: Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. In this letter, the authors report a strong radiative emission rate enhancement of Er3+-ions across the telecommunications C-band in a single plasmonic waveguide based on the Purcell effect. The waveguide uses a reverse nanofocusing approach to efficiently enhance, extract, and guide emission from the nanoscale to a photonic waveguide, while keeping losses at a minimum.
NATURE COMMUNICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Robert Wonneberger, Gloria Kirste, Martin Seyring, Martin Hafermann, Carsten Ronning, Maximilian Schaal, Felix Otto, Torsten Fritz, Andreas Undisz
Summary: Understanding the growth mechanism of oxide layer on 316 L requires knowledge of reaction front position, oxide phase formation, and elements diffusion paths. By using Mn as a tracer in a new experimental approach, essential information of the early stages of oxidation up to 600 °C is obtained. The study suggests a previously undocumented role of Cr valence state during oxide growth, as Cr6+ is detected at 600 °C.
Article
Materials Science, Multidisciplinary
Alexander Koch, Hongyan Mei, Jura Rensberg, Martin Hafermann, Jad Salman, Chenghao Wan, Raymond Wambold, Daniel Blaschke, Heidemarie Schmidt, Jurgen Salfeld, Sebastian Geburt, Mikhail A. A. Kats, Carsten Ronning
Summary: This study demonstrates the heavy and hyper doping of ZnO with gallium (Ga) ions using a focused ion beam (FIB) system combined with post-implantation laser annealing. The ion implantation allows for the incorporation of impurities with high concentrations, while the laser annealing process activates the dopants close to or beyond the solid-solubility limit of Ga in ZnO. Heavy doped ZnO:Ga with a free-carrier concentration of approximately 10^(21) cm^(-3) and a plasma wavelength of 1.02 μm is achieved, making it a promising plasmonic material for applications in the near infrared regime.
ADVANCED PHOTONICS RESEARCH
(2023)
Article
Chemistry, Multidisciplinary
Edwin Eobaldt, Francesco Vitale, Maximilian Zapf, Margarita Lapteva, Tarlan Hamzayev, Ziyang Gan, Emad Najafidehaghani, Christof Neumann, Antony George, Andrey Turchanin, Giancarlo Soavi, Carsten Ronning
Summary: Mixed-dimensional hybrid structures are promising building blocks for controlling and modulating lasers at the nanoscale. Hybridization of ZnO nanowires with MoS2 monolayers allows for tuning the lasing wavelength at the nanoscale.
Article
Instruments & Instrumentation
Taisei Hayashi, Kensei Ichiba, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida
Summary: In this study, Cr-doped Mg4Ta2O9 single crystals with different doping levels were synthesized using the floating zone method, and their photoluminescence and scintillation properties were evaluated. The results showed that Cr-doped Mg4Ta2O9 single crystals exhibited broad emission bands in the near-infrared region and showed scintillation characteristics within specific wavelength ranges. Additionally, the samples with different Cr doping levels demonstrated different lower detection limits based on the dose rate response function.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Instruments & Instrumentation
S. Marouf, A. C. Chami, Y. Boudouma
Summary: This study develops a Monte Carlo simulation approach to describe proton-induced secondary electron emission in solids. Theoretical modeling based on the Mott's elastic scattering cross-section and Lindhard's dielectric function was used to calculate the double differential cross-section (DDCS) of excited electrons and describe electron transport in the medium. The results for aluminum show the angular and energy distributions of backscattered electrons for incident protons with energy below 25 keV at normal incidence, and the total electron emission yield also agrees well with available measurements.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Instruments & Instrumentation
Weipeng Yan, Baojun Duan, Zijian Zhu, Yan Song, Guzhou Song, Jiming Ma, Binkang Li, Yucheng Liu
Summary: This article reports on the scintillation performance of Lithium-doped 2D (PEA)2PbBr4 perovskite single crystals synthesized at room temperature. The crystals exhibit fast decay time, high light yield, and high spatial resolution, making them highly promising for medical diagnostic applications.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Instruments & Instrumentation
S. B. Vishwakarma, S. K. Dubey, R. L. Dubey, I. Sulania, D. Kanjilal
Summary: Investigations have been conducted on the implanted SiO2 thin film after thermal annealing using various analytical techniques. The results revealed the absence of vacancy defects, variations in vibrational modes and the formation of new structures. The photoluminescence intensity of the annealed SiO2 samples was higher, with a decrease in non-radiative defect centers and an increase in radiative Si:SiO2 interface states. Additionally, the presence of silicon nanoclusters formed after annealing resulted in an additional radiative recombination peak. Furthermore, the formation of new SiOx structures was observed after thermal annealing.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Instruments & Instrumentation
M. Koshimizu, S. Kurashima, A. Kimura, M. Taguchi
Summary: By observing the scintillation time profiles of CeF3 under irradiations of pulsed beams with different LETs, we found that the initial decay was faster for higher LET, which is consistent with previous studies on other self-activated scintillators. This faster decay at higher LET can be explained by the competition between the scintillation caused by 5d-4f transition of Ce3+ ions and quenching due to the interaction between excited Ce3+ ions close to each other.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Instruments & Instrumentation
Junjie Shi, Jianhong Hao, Fang Zhang, Qiang Zhao, Bixi Xue, Jieqing Fan, Zhiwei Dong
Summary: This study examined the neutralization process and beam quality of a hydrogen beam by emitting negative hydrogen ions to a hydrogen target. The findings showed that the neutralization efficiency was influenced by variables such as the transport distance, energy, and target gas density. However, the maximal neutralization efficiency was not affected by the density of the target gas or the energy of the negative hydrogen ions.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
