Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs

Frequency dependence on polarization switching measurement in ferroelectric capacitors

(2022) Zhaomeng Gao et al.   Journal of Semiconductors

Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits

(2022) Yongsu Lee et al.   ACS Nano

Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf 0.5 Zr 0.5 O 2 Gate Dielectric Using Graphene FETs

(2021) Hyeon Jun Hwang et al.   Advanced Electronic Materials

Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2021) Dong Hyun Lee et al.   ACTA MATERIALIA

Is negative capacitance FET a steep-slope logic switch?

(2020) Wei Cao et al.   Nature Communications

A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

(2020) Li Chen et al.   Advanced Electronic Materials

Emerging Memory Devices for Neuromorphic Computing

(2019) Navnidhi K. Upadhyay et al.   Advanced Materials Technologies

Time-Resolved Measurement of Negative Capacitance

(2018) Pankaj Sharma et al.   IEEE ELECTRON DEVICE LETTERS

On the stabilization of ferroelectric negative capacitance in nanoscale devices

(2018) Michael Hoffmann et al.   Nanoscale

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation

(2016) Girish Pahwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Graphene transfer in vacuum yielding a high quality graphene

(2015) Sangchul Lee et al.   CARBON

Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions

(2015) Minsuk Kim et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Impact of a Pocket Doping on the Device Performance of a Schottky Tunneling Field-Effect Transistor

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method

(2013) Young Gon Lee et al.   CARBON

Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

(2013) Hyeon Jun Hwang et al.   NANOTECHNOLOGY

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

(2011) Young Gon Lee et al.   APPLIED PHYSICS LETTERS

Negative capacitance to the rescue?

(2008) Victor V. Zhirnov et al.   Nature Nanotechnology

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS