Performance Comparison Between Inversion Mode and Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using Dual Metal Gate Work Function Engineering for Upcoming Sub 5 nm Technology Node
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Title
Performance Comparison Between Inversion Mode and Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using Dual Metal Gate Work Function Engineering for Upcoming Sub 5 nm Technology Node
Authors
Keywords
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Journal
Silicon
Volume -, Issue -, Pages -
Publisher
Springer Science and Business Media LLC
Online
2023-10-28
DOI
10.1007/s12633-023-02730-x
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