Article
Chemistry, Multidisciplinary
Yulin Gan, Fazhi Yang, Lingyuan Kong, Xuejiao Chen, Hao Xu, Jin Zhao, Gang Li, Yuchen Zhao, Lei Yan, Zhicheng Zhong, Yunzhong Chen, Hong Ding
Summary: A significant enhancement of Rashba spin-orbit coupling (RSOC) achieved at a superconducting amorphous-Hf0.5Zr0.5O2/KTaO3(110) heterointerface under light illumination is reported. The RSOC strength can be as high as 1.9 T in the normal state and increases to a peak value of 12.6 T under light illumination near the Lifshitz transition point, showing great potential for spintronics.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Hang Yin, Shuanhu Wang, Kexin Jin
Summary: Complex oxide heterointerfaces have rich physical phenomena and broad quantum coherence, and light can be used to manipulate properties and observe interesting physical phenomena, such as enhanced magnetoresistance.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Tao Liu, Du Xiang, Hong Kuan Ng, Zichao Han, Kedar Hippalgaonkar, Ady Suwardi, Jens Martin, Slaven Garaj, Jing Wu
Summary: This research demonstrates the ability to modulate spin dynamics through strain and investigates this phenomenon in bilayer MoS2 FETs. The experimental results show that strain fields from the substrate crests cause additional spin relaxation paths, and the spin lifetime is inversely proportional to the momentum relaxation time. Furthermore, strain enhances spin-lattice coupling. This work contributes to the development of new functional quantum devices.
Article
Materials Science, Multidisciplinary
Kaijian Xing, Daniel L. Creedon, Golrokh Akhgar, Steve A. Yianni, Jeffrey C. McCallum, Lothar Ley, Dong-Chen Qi, Christopher Pakes
Summary: The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. Furthermore, local hole mobilities as high as 1000-3000 cm2/V s have been observed, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.
Article
Chemistry, Multidisciplinary
Chia-Tse Tai, Po-Yuan Chiu, Chia-You Liu, Hsiang-Shun Kao, C. Thomas Harris, Tzu-Ming Lu, Chi-Ti Hsieh, Shu-Wei Chang, Jiun-Yun Li
Summary: The demonstration of 2D hole gases in GeSn/Ge heterostructures shows a high mobility of up to 20,000 cm(2) V-1 s(-1). The study observed Shubnikov-de Haas oscillations and integer quantum Hall effect, and investigated the Rashba spin-orbit coupling through magneto-transport. Additionally, a transition from weak localization to weak anti-localization was observed, demonstrating the tunability of SOC strength by gating.
ADVANCED MATERIALS
(2021)
Review
Chemistry, Multidisciplinary
Anshu Gupta, Harsha Silotia, Anamika Kumari, Manish Dumen, Saveena Goyal, Ruchi Tomar, Neha Wadehra, Pushan Ayyub, Suvankar Chakraverty
Summary: This article discusses the research progress and future application prospects of KTaO3, an oxide material. This material has excellent physical properties and potential applications, and has attracted widespread attention.
ADVANCED MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Michael Kammermeier, Takahito Saito, Daisuke Iizasa, Ulrich Zulicke, Makoto Kohda
Summary: This study examines quantum interference corrections to the magnetoconductivity in two-dimensional electron gases with Rashba and Dresselhaus spin-orbit coupling, comparing the Landau-quantized Cooperon approach with the quasiclassical approximation. It is found that the quasiclassical approximation yields significantly different results, which can be improved by supplementing with corrections from the Euler-MacLaurin formula, but only feasible in special spin-orbit parameter configurations. The derived closed-form expression for the magnetoconductivity correction is validated through comparisons with numerical diagonalization and Monte Carlo simulations in different 2DEG crystal directions.
Article
Physics, Condensed Matter
Robert Bartel, Elias Lettl, Patrick Seiler, Thilo Kopp, German Hammerl
Summary: Oxide heterostructures are able to study in detail 2D electronic transport phenomena, with different spin-orbit-coupled systems exhibiting characteristic magnetotransport behavior. Experimental results show strong interplay between weak antilocalization (WAL) and electron-electron interaction (EEI) in single-band systems, while theoretical investigations predict significant impact of band filling on the topological Hall effect in multiband systems.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Yunhan Cai, Di Yue, Jingu Qin, Xiaofeng Jin
Summary: By studying Bi delta-doped Cu films, we discovered the tunable spin diffusion length and found that the spin relaxation is mainly influenced by Bi impurities following a specific mechanism.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Hiroshi Hayasaka
Summary: This study investigates the quantum correction effect on electrical conductivity in a two-dimensional Wolff Hamiltonian, which models the spin-orbit coupling lattice system. The nonadiabatic transition processes in impurity scattering suppress the weak antilocalization effect, with a strong dependence on the spin relaxation length in the SOC lattice system. The spin relaxation length in Bi thin film is discussed in detail.
Article
Physics, Condensed Matter
Jiancui Chen, Zhang Zhou, Hongtao Liu, Ce Bian, Yuting Zou, Zhenyu Wang, Zhen Zhao, Kang Wu, Haitao Yang, Chengmin Shen, Zhi Gang Cheng, Lihong Bao, Hong-Jun Gao
Summary: A chemical vapor deposition method is presented for synthesizing single-crystal 1T'-MoTe2 nanowires and observing the one-dimensional weak antilocalization effect for the first time. The diameters of the nanowires can be controlled by changing the gas flux, and the resistivity shows metallic behavior in agreement with Fermi liquid theory. The study provides insights into electron-electron interaction dephasing mechanisms in one dimension and demonstrates the potential for preparing one-dimensional topological materials.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2021)
Article
Chemistry, Multidisciplinary
Mi-Jin Jin, Doo-Seung Um, Kohei Ohnishi, Sachio Komori, Nadia Stelmashenko, Daeseong Choe, Jung-Woo Yoo, Jason W. A. Robinson
Summary: This study demonstrates nonlocal spin-transport on a two-dimensional surface-conducting SrTiO3 (STO) via the spin Hall effect, without the need for a ferromagnetic spin-injector. Anisotropic spin-signal consistent with Hanle precession of pure spin current is observed by applying magnetic fields at different angles to the nonlocal spin-diffusion. Key transport parameters extracted include a spin Hall angle of approximately 0.25, a spin lifetime of around 49 ps, and a spin diffusion length of approximately 1.23 μm at 2 K.
Article
Multidisciplinary Sciences
Yuki Hibino, Tomohiro Taniguchi, Kay Yakushiji, Akio Fukushima, Hitoshi Kubota, Shinji Yuasa
Summary: The study elucidates a mechanism behind the enhancement of magnetic-dependent charge-to-spin conversion in ferromagnetic materials, highlighting the dominant role of interfacial contribution and the potential for control via interfacial band engineering. It shows that the efficiency of charge-to-spin conversion in ferromagnets surpasses other materials with reduced symmetry.
NATURE COMMUNICATIONS
(2021)
Article
Materials Science, Multidisciplinary
S. Chillal, A. T. M. N. Islam, P. Steffens, R. Bewley, B. Lake
Summary: The study used inelastic neutron scattering technique to investigate the magnetic Hamiltonian of the Heisenberg quantum antiferromagnet SrCuTe2O6. Different behaviors were observed above and below the magnetic transition temperatures, revealing a unique one-dimensional nature of the material. The results suggest that SrCuTe2O6 has a highly one-dimensional Heisenberg system with complex coupling interactions, presenting a scenario different from other related materials.
Article
Optics
Zheng Gao, Lianyi He, Huaisong Zhao, Shi-Guo Peng, Peng Zou
Summary: We calculate the density dynamic structure factor of one-dimensional Fermi superfluid with Raman-type spin-orbit coupling and analyze its main dynamical characteristics during the phase transition between Bardeen-Cooper-Schrieffer superfluid and topological superfluid. Our results show four types of single-particle excitations induced by the two-branch structure of the single-particle spectrum, and the cross single-particle excitation is more easily observed in the spin dynamic structure factor at a small transferred momentum. Additionally, we observe a new rotonlike collective mode at a fixed transferred momentum q similar to 2(k)F, which only appears in the topological superfluid state.
Article
Chemistry, Physical
Lixia Ren, Yutao Wang, Min Wang, Shuanhu Wang, Yang Zhao, Claudio Cazorla, Changle Chen, Tom Wu, Kexin Jin
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2020)
Article
Physics, Applied
Hafiz M. Zeeshan, Mehwish K. Butt, Shuanhu Wang, Mubashar Rafiq, Kexin Jin
APPLIED PHYSICS LETTERS
(2020)
Article
Chemistry, Physical
Ming Li, You Zhou, Yunhai Chen, Ruishu Yang, Xiangyang Wei, Shuanhu Wang, Kexin Jin
Summary: This study systematically investigates the intrinsic effects of rare earth elements on the amorphous two-dimensional electron gas (a-2DEG) at ReAlO3/SrTiO3 heterointerfaces, revealing the critical influence of the ionization potential of Re elements on the 2DEG. The photoresponsive properties of heterointerfaces with different ionization potentials are comprehensively examined, showing a correlation between ionization potential and sheet resistance. Additionally, a unique recovery behavior of transient-persistent photoconductivity coexistence is discovered at low temperatures at the TmAlO3/SrTiO3 heterointerface.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Physics, Condensed Matter
Mehwish Khalid Butt, Hafiz Muhammad Zeeshan, Yang Zhao, Shuanhu Wang, Kexin Jin
Summary: The formation of conductive LaFeO3/SrTiO3 interfaces was reported for the first time by controlling defects in SrTiO3, leading to the growth of a two-dimensional electron gas. These conductive interfaces exhibit a resistance upturn at low temperatures, which can be significantly diminished by light irradiation, showing persistent photoconductivity. The relative change in resistance is found to be as high as 60 to 185.8% at 20 K, providing insights into defect control in oxide interfaces for optoelectronic devices.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2021)
Article
Chemistry, Physical
Ming Li, Huijuan Dong, Xiangyang Wei, Ruishu Yang, Hang Yin, Shuanhu Wang, Kexin Jin
Summary: The coexistence of metallicity and ferroelectricity-like polarization is reported at GdAlO3/SrTiO3 heterointerfaces, where the transport property can be significantly manipulated by switching the polarization state. The switchable conductance improves under the influence of a polarization state at 6 V, accelerating the commercial application of oxide devices.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Physics, Applied
Yingyi Tian, Shuanhu Wang, Xiangyang Wei, Ruishu Yang, Kexin Jin
Summary: This study investigates the modulation of electric, magnetic, and thermal properties of transition metal oxide films by introducing a polycrystalline structure, and explores the mechanism through studying the two-channel anomalous Hall effect in polycrystalline SrRuO3 films.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Multidisciplinary
Shuanhu Wang, Hui Zhang, Jine Zhang, Shuqin Li, Dianbing Luo, Jianyuan Wang, Kexin Jin, Jirong Sun
Summary: In this study, the circular photogalvanic effect (CPGE) in oxide two-dimensional electron gases (2DEGs) is reported for the first time. Selectively excited spin polarized electrons from the in-gap states of SrTiO3 are converted into electric current via the mechanism of spin-momentum locking arising from Rashba spin-orbit coupling. Furthermore, the CPGE can be effectively modified by the density and distribution of oxygen vacancies, providing an effective approach to generate and manipulate spin polarized current in oxide spintronics.
PHYSICAL REVIEW LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Ruishu Yang, Yuqiang Gao, Shuanhu Wang, Kexin Jin
Summary: The engineered interfaces of complex oxides have diverse physical properties, providing a powerful platform for exploring fundamental physics and emergent phenomena. By introducing a few atomic layers of delta doping layer at LaAlO3/SrTiO3 interfaces and inserting a SrRuO3 buffer layer, the interfaces exhibit enhanced mobility and a large unsaturated positive magnetoresistance at low temperatures. These findings pave the way for further research on two-dimensional ferromagnetism and quantum transport in all-oxide systems.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Zhuokun Han, Boyong Zhang, Fenglin Wang, Bingcheng Luo, Shuanhu Wang, Wei Zhai, Jianyuan Wang
Summary: Ferroelectric modulation of photoreponse and electroresistance is demonstrated in Pt/PZT/NSTO heterostructure. The modulation of ferroelectric polarization affects the separation of photogenerated carriers, resulting in a significant change in photocurrent. The ferroelectric polarization and light illumination also modulate the barrier height and width, leading to a change in the resistance ratio.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
Hang Yin, Shuanhu Wang, Kexin Jin
Summary: Complex oxide heterointerfaces have rich physical phenomena and broad quantum coherence, and light can be used to manipulate properties and observe interesting physical phenomena, such as enhanced magnetoresistance.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Physics, Applied
Yunhai Chen, Dianbing Luo, Xinyu Cao, Yifei Wang, Phyo Aung, Kexin Jin, Shuanhu Wang
Summary: Oxygen vacancies doping was used to modulate the electrical transport properties in Y3Fe5O12 (YIG) films. The presence of a large amount of oxygen vacancies in the YIG film converted it from an insulator to a conductor. At high temperature and high vacuum, the oxygen vacancies increased the disorder, resulting in a constant range hopping conduction. However, exposure to air caused the oxygen vacancies to recombine and disappear, changing the conduction mechanism to drift mode.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Mehwish Khalid Butt, Javed Rehman, Zhao Yang, Shuanhu Wang, Ahmed El-Zatahry, Ayman S. Alofi, Munirah D. Albaqami, Reham Ghazi Alotabi, Amel Laref, Kexin Jin, Mohamed F. Shibl
Summary: This study investigates the binding and diffusion mechanisms of sodium particles on a two-dimensional SnS sheet using density functional theory (DFT). The results demonstrate that the SnS monolayer exhibits strong binding strength, charge transfer, and excellent electrochemical performance as an anode for sodium-ion batteries (SIBs). These findings suggest the potential application of SnS as a promising anode material for next-generation SIBs.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Hang Yin, Ruishu Yang, Shuanhu Wang, Kexin Jin
Summary: Chemical doping is a dominant method for manipulating oxide two-dimensional electron gas (2DEG). However, maintaining metallic conduction while enhancing the doping level remains challenging. In this study, a concept of high-entropy heterointerface is proposed and high-entropy heterointerfaces with different thicknesses and doping ratios are successfully fabricated. The results demonstrate the potential of this strategy to tailor 2DEG in all-oxide interfaces while maintaining its conductivity.
Article
Engineering, Electrical & Electronic
Ruishu Yang, Hang Yin, Ming Li, Shuanhu Wang, Kexin Jin
Summary: The electronic transport property at heterointerfaces is investigated by introducing buffer layers of lanthanum cobaltate with different thicknesses. The interfaces show a metal-to-insulator transition and the mobility is significantly enhanced by increasing the thickness. Two types of carriers at the interfaces are observed, accompanied by the spin-orbit coupling effect, which is attributed to the occupation of the 3d-orbit band of carriers. These findings have important implications for the application of oxide spintronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
