Optically excited artificial synapse based on α-In2Se3 FETs on Ta2O5
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Title
Optically excited artificial synapse based on α-In2Se3 FETs on Ta2O5
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 38, Issue 9, Pages 095008
Publisher
IOP Publishing
Online
2023-07-11
DOI
10.1088/1361-6641/ace5cc
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