New reliability model for power SiC MOSFET technologies under static and dynamic gate stress

Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation

(2022) P. Salmen et al.   MICROELECTRONICS RELIABILITY

AC-Stress Degradation and Its Anneal in SiC MOSFETs

(2022) Daniel B. Habersat et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Measurement considerations for evaluating BTI effects in SiC MOSFETs

(2018) Daniel B. Habersat et al.   MICROELECTRONICS RELIABILITY

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

(2018) Thomas Aichinger et al.   MICROELECTRONICS RELIABILITY

Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

(2017) Eiichi Murakami et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

(2008) Aivars J. Lelis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES