Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Published 2016 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
Authors
Keywords
Oxide breakdown, Progressive breakdown, High-k dielectrics, III–V MOS devices
Journal
MICROELECTRONICS RELIABILITY
Volume 56, Issue -, Pages 22-28
Publisher
Elsevier BV
Online
2015-10-21
DOI
10.1016/j.microrel.2015.10.009

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.