High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

A Metaverse: Taxonomy, Components, Applications, and Open Challenges

(2022) Sang-Min Park et al.   IEEE Access

Improved f T/f max in wide bias range by steam-annealed ultrathin-Al2O3 gate dielectrics for InP-based high-electron-mobility transistors

(2022) Shiro Ozaki et al.   Applied Physics Express

220–320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology

(2022) Eissa Mohamed et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Future of 300-GHz-band wireless communications and their enabler, CMOS transceiver technologies

(2021) Minoru Fujishima   JAPANESE JOURNAL OF APPLIED PHYSICS

A 250-GHz 12.6-dB Gain and 3.8-dBm P sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G max-Core

(2021) Byeonghun Yun et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm P out in a 35-nm InGaAs mHEMT Technology

(2021) Fabian Thome et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

(2021) Hiroshi Hamada et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

A survey on 5G/6G, AI, and Robotics

(2021) Liang Qiao et al.   COMPUTERS & ELECTRICAL ENGINEERING

The Road beyond 5G: A Vision and Insight of the Key Technologies

(2020) Konstantinos Samdanis et al.   IEEE NETWORK

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

(2020) Laurenz John et al.   IEEE Transactions on Terahertz Science and Technology

300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

(2020) Hiroshi Hamada et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

A 273–301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

(2019) Korkut Kaan Tokgoz et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Feasibility Study of Wafer-Level Backside Process for InP-Based ICs

(2019) Takuya Tsutsumi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

(2017) Tsuyoshi Takahashi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

300-GHz Amplifier in 75-nm InP HEMT Technology

(2016) Hiroshi MATSUMURA et al.   IEICE TRANSACTIONS ON ELECTRONICS

300-GHz Amplifier in 75-nm InP HEMT Technology

(2016) Hiroshi MATSUMURA et al.   IEICE TRANSACTIONS ON ELECTRONICS

A Prescription for Sub-Millimeter-Wave Transistor Characterization

(2013) Dylan F. Williams et al.   IEEE Transactions on Terahertz Science and Technology