A 250-GHz 12.6-dB Gain and 3.8-dBm P sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G max-Core

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Title
A 250-GHz 12.6-dB Gain and 3.8-dBm P sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G max-Core
Authors
Keywords
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Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 31, Issue 3, Pages 292-295
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-01-13
DOI
10.1109/lmwc.2020.3046745

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