Article
Chemistry, Physical
Tong Su, Bohan Xiao, Zikang Ai, Lingjie Bao, Wencheng Chen, Yuheng Shen, Qijin Cheng, Kostya (Ken) Ostrikov
Summary: Most high-performance 8-Ga2O3 thin films are currently grown using expensive techniques such as molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition. A custom-made plasma-enhanced chemical vapor deposition method is designed to achieve fast and cost-effective growth of 8-Ga2O3 thin films. The plasma-enhanced thermal oxidation process results in higher growth rates and improved film quality compared to traditional thermal oxidation methods.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Yiwen Song, Praneeth Ranga, Yingying Zhang, Zixuan Feng, Hsien-Lien Huang, Marco D. Santia, Stefan C. Badescu, C. Ulises Gonzalez-Valle, Carlos Perez, Kevin Fern, Robert M. Lavelle, David W. Snyder, Brianna A. Klein, Julia Deitz, Albert G. Baca, Jon-Paul Maria, Bladimir Ramos-Alvarado, Jinwoo Hwang, Hongping Zhao, Xiaojia Wang, Sriram Krishnamoorthy, Brian M. Foley, Sukwon Choi
Summary: This study investigates the thermal conductivity of heteroepitaxial beta-Ga2O3 films, and finds that the thermal conductivity is strongly influenced by film thickness, crystallinity, and substrate offcut angles. Additionally, the thermal conductivity of ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films grown via MOVPE was characterized, with results showing lower conductivity due to phonon-alloy disorder scattering. These findings provide fundamental insights for the development of beta-Ga2O3 electronic and optoelectronic devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Laia Castilla-Amoros, Tzu-Chin Chang Chien, James R. Pankhurst, Raffaella Buonsanti
Summary: Micro- and nanosized particles of liquid metals, particularly Ga-based alloys, have gained attention for various applications. Surface functionalization of Ga-based nanoparticles with organic ligands allows for easily processable inks. This study investigates the interaction between these ligands and the native oxide skin of liquid metal nanoparticles, which plays an important role in regulating their properties. The choice of ligand is found to affect the oxide thickness and chemical reactivity of Ga nanoparticles. Thermodynamics and kinetics suggest that it is the affinity of the anchoring group towards the metal core that determines oxide thickness. Thicker oxide shells promote the formation of Cu-Ga nanodimers, while thinner oxides lead to isolated Cu nanoparticles. This research emphasizes the importance of selecting the appropriate ligand when studying Ga-based metal nanoparticles for different applications.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2022)
Article
Materials Science, Ceramics
Thi Ha Tran, Thi Mai Anh Nguyen, Vu Phuong Thao Dao, Cong Doanh Sai, Thanh Cong Bach, Nguyen Hai Pham, An Bang Ngac, Van Thanh Pham, Thi Kim Chi Tran, Hyeonsik Cheong, Viet Tuyen Nguyen
Summary: This study reports a facile process to fabricate CuO/Au core/shell nanowires, which show high sensitivity as SERS substrates capable of detecting methylene blue at concentrations as low as 10(-13) M. The major advantages of these SERS substrates are their sensitivity, uniformity, and purity without the presence of organic surfactants in the synthesis process.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Physical
Yunrui Han, Yingkuan Han, Qihang He, Hong Liu, Yu Zhang, Lin Han
Summary: This study successfully fabricated an AgNPs@ LIG SERS chip with excellent sensitivity and uniformity, which realized large-scale production with controllable shape and area. The chip features a limit of detection (LOD) of 10-14 M, an enhancement factor (EF) of 3 x 1010, and fine uniformity. Furthermore, the chip was applied to the detection of melamine and showed potential application value for pollutant analysis. The preparation of the composite SERS chip is simple for mass production, providing great potential for the development of ultrasensitive SERS biosensors for various biological and chemical analyses.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Sufen Wei, Yi Liu, Qianqian Shi, Tinglin He, Feng Shi, Ming-kwei Lee, Choongik Kim
Summary: Nitrogen-doped p-type β-Ga2O3 films with enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. The results showed that nitrogen doping played a significant role in determining p-type electrical properties and the thermal oxidation of GaN in a N2O atmosphere was more efficient.
Article
Chemistry, Multidisciplinary
Cheng Wang, Pin-Jie Chen, Chun-Hway Hsueh
Summary: In this study, an Au-Cu-Si activation layer was successfully used as a substitute for the commonly used gold layer in propagating surface plasmon resonance sensors. The results showed that Au-based TFMG is feasible and has advantages of lower cost and better performance.
Article
Chemistry, Analytical
Muhammad Ans
Summary: The study found that using a coating method with graphene oxide can significantly improve the oxidation stability of copper. In the short term, a monolayer of graphene oxide does not significantly affect the oxidation kinetics; however, in the long term, the graphene oxide film can effectively reduce the further propagation of the cuprous oxide layer.
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
(2021)
Article
Chemistry, Physical
Lukasz Janicki, Ryszard Korbutowicz, Mariusz Rudzinski, Piotr Michalowski, Sebastian Zlotnik, Milosz Grodzicki, Sandeep Gorantla, Jaroslaw Serafinczuk, Detlef Hommel, Robert Kudrawiec
Summary: This study comprehensively investigates the structural and optical properties of GaN subjected to three oxidation modes. The results reveal that all modes lead to the growth of beta-phase Ga2O3, but they differ in surface morphology, growth rate, and oxygen diffusion behavior. Only the vapor oxidation process does not degrade the material underneath the oxide layer.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Florian Wilhelmi, Yuji Komatsu, Shinya Yamaguchi, Yuki Uchida, Tadashi Kase, Shinji Kunori, Andreas Lindemann
Summary: This article evaluates different assembly strategies for Gallium oxide (Ga2O3) Schottky diodes and discusses the influence of substrate thickness, on-resistance, and assembly method on the power and current rating of the diodes. It also shows that optimizing the die attach thickness or using underfill materials in a specific configuration can reduce the average junction temperature and local temperature peaks.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Qais M. Al-Bataineh, Wajde T. Bani-Hani, Ahmad A. Ahmad, Ahmad M. Alsaad, Ahmad D. Telfah
Summary: This study presents a newly designed electrochemical catalytic steel electrode coated with ZnO films, inspired by the shape of a double-walled carbon nanotube, for water treatment and water-splitting applications. Compared to other electrode structures, the proposed electrode structure exhibits high electrochemical catalytic degradation activity and water-splitting efficiency.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Materials Science, Coatings & Films
Lakshman Srinivasan, Cyril Jadaud, Francois Silva, Jean-Charles Vanel, Jean-Luc Maurice, Erik Johnson, Pere Roca i Cabarrocas, Karim Ouaras
Summary: We successfully grew polycrystalline GaN thin films on Si (100) substrates at room temperature using radiofrequency reactive magnetron sputtering, with Ar and N-2 as the main sputtering and N-atom precursor gas sources, respectively. The effect of working pressure on the thin film's crystalline quality was studied, and it was found that pressures below 50 mTorr result in amorphous films, while pressures above 50 mTorr result in polycrystalline films. The films grown at 50 mTorr exhibited the best crystallinity with a dominant wurtzite hexagonal structure, and a uniform elemental distribution of Ga and N throughout the growth profile.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Chemistry, Physical
Wei Zhang, Tianxing Zheng, Bin Ai, Panpan Gu, Yuduo Guan, Yu Wang, Zhiyuan Zhao, Gang Zhang
Summary: Au-P-Au-coupled gold nanoparticle platforms with multiple nanogaps were fabricated using nanoskiving and polymer-assisted assembly. The platform showed strong electric field enhancement due to the confinement of incident light, leading to significant surface-enhanced Raman scattering performance and sensitive detection of glucose.
APPLIED SURFACE SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Yi Liu, Sufen Wei, Chan Shan, Mingjie Zhao, Shui-Yang Lien, Ming-kwei Lee
Summary: A remarkable improvement in the conductivity and crystalline quality of grown nitrogen-doped p-type beta-Ga2O3 films was achieved by thermal oxidation of GaN in N2O ambient. The resulting two-layer structure, with a top layer composed of nanorods and a bottom compact layer, can be applied to photocatalysts and high-performance photodetectors or electronic devices.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2022)
Article
Physics, Applied
Robert H. Montgomery, Yuewei Zhang, Chao Yuan, Samuel Kim, Jingjing Shi, Takeki Itoh, Akhil Mauze, Satish Kumar, James Speck, Samuel Graham
Summary: By using a thermally conductive dielectric over the MOSFET structure and bonding thermal spreaders to its topside, significant improvements in device power density and thermal performance can be achieved.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Computer Science, Interdisciplinary Applications
Cesar G. Galvan, Jose M. Cabrera-Trujillo, Ivonne J. Hernandez-Hernandez, Luis A. Perez
INTERNATIONAL JOURNAL OF MODERN PHYSICS C
(2017)
Article
Physics, Applied
H. Hernandez-Arriaga, E. Lopez-Luna, E. Martinez-Guerra, M. M. Turrubiartes, A. G. Rodriguez, M. A. Vidal
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Materials Science, Multidisciplinary
H. Vilchis, V. D. Compean-Garcia, I. E. Orozco-Hinostroza, E. Lopez-Luna, M. A. Vidal, A. G. Rodriguez
Article
Materials Science, Multidisciplinary
Edgar Briones, Irving E. Cortes-Mestizo, Joel Briones, Ravindranath Droopad, Leticia I. Espinosa-Vega, Heber Vilchis, Victor H. Mendez-Garcia
JOURNAL OF PHOTONICS FOR ENERGY
(2017)
Article
Materials Science, Multidisciplinary
A. G. Rodriguez, S. G. Chavez-Veloz, V. D. Compean-Garcia, E. Lopez-Luna, M. A. Vidal
MATERIALS RESEARCH EXPRESS
(2017)
Article
Engineering, Electrical & Electronic
J. Conde, I. Zuniga, H. Vilchis, N. Hernandez-Como, F. Pola-Albores, J. Pantoja
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2018)
Article
Engineering, Electrical & Electronic
F. Pola-Albores, K. Zambrano-Solis, E. Rios-Valdovinos, J. Conde-Diaz, H. Vilchis-Bravo, Juan A. Reyes-Nava, J. Pantoja-Enriquez, J. Moreira-Acosta
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2018)
Article
Engineering, Electrical & Electronic
J. S. Arias-Ceron, H. Vilchis, D. M. Hurtado-Castaneda, V. M. Sanchez
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2018)
Article
Physics, Condensed Matter
Cesar G. Galvan, Luis A. Perez, Chumin Wang
PHYSICA B-CONDENSED MATTER
(2019)
Article
Engineering, Electrical & Electronic
V. D. Compean-Garcia, H. Moreno-Garcia, E. Lopez-Luna, H. Perez Ladron de Guevara, A. Escobosa Echavarria, Y. Kudriavtsev, F. J. Rodriguez-Aranda, A. G. Rodriguez, M. A. Vidal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2019)
Article
Physics, Multidisciplinary
Carlos Ramirez, Fernanda H. Gonzalez, Cesar G. Galvan
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
(2019)
Article
Physics, Condensed Matter
Jose Manuel Cabrera-Trujillo, Juan Martin Montejano-Carrizales, Cesar G. Galvan
EUROPEAN PHYSICAL JOURNAL B
(2019)
Article
Chemistry, Physical
Enrique Gonzalez-Tovar, Jose Adrian Martinez-Gonzalez, Cesar Gabriel Galvan Pena, Guillermo Ivan Guerrero-Garcia
JOURNAL OF CHEMICAL PHYSICS
(2021)
Article
Chemistry, Physical
Jonathan Josue Elisea-Espinoza, Enrique Gonzalez-Tovar, Jose Adrian Martinez-Gonzalez, Cesar G. Galvan Pena, Guillermo Ivan Guerrero-Garcia
Summary: According to the dominance prescription of point-ions in the non-linear Poisson-Boltzmann theory, the structural and thermodynamic properties of a symmetric electrolyte converge asymptotically to those of a completely symmetric electrolyte at an infinite surface charge density. However, finite differences between local mean electrostatic potentials and electric fields associated to different electrolyte types may be observed near the electrode's surface, indicating that counterions do not fully dominate the properties in the entire electrical double layer in the non-linear Poisson-Boltzmann framework.
Article
Chemistry, Analytical
Luis C. Ortiz-Dosal, Eleazar S. Kolosovas-Machuca, M. Carmen Rodriguez-Aranda, Edgar Lopez-Luna, Heber Hernandez-Arriaga, Gustavo Vera-Reveles, Francisco J. Gonzalez
ANALYTICAL LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
